Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
|
127mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- A common package type with low thermal resistance and easy installation. The TO220 package provides good heat dissipation and is suitable for power devices.
- **Configuration**: Unipolar N-channel
- Indicates that the MOSFET is a unipolar N-channel device, which generally has lower on-resistance and faster switching speed than P-channel MOSFETs.
- **VDS (drain-source voltage)**: 100V
- The maximum voltage that can be applied between the drain and the source, exceeding this value may damage the MOSFET.
- **VGS (gate-source voltage)**: ±20V
- The maximum allowable voltage between the gate and the source. The ±20V rating provides some flexibility for the gate drive voltage.
- **Vth (Threshold Voltage)**: 1.8V
- The minimum gate-source voltage required to turn on the MOSFET. Lower Vth allows the device to turn on at a lower gate voltage, improving efficiency.
- **RDS(ON) (On-Resistance)**: 127mΩ @ VGS=10V
- The resistance between the drain and the source when the MOSFET is fully turned on. Lower RDS(ON) means less power loss, which helps improve overall efficiency.
- **ID (Continuous Drain Current)**: 18A
- The maximum current that can continuously flow through the drain when the MOSFET is turned on. This parameter is critical in determining the load capacity of the device.
- **Technology**: Trench
- A manufacturing process that allows higher density and improved performance, including lower on-resistance and faster switching speeds. Trench technology is often used in modern MOSFETs for its superior characteristics.
Domain and module applications：
Application Examples
HUFA75623P3-VB MOSFET has a wide range of application areas and modules.
1. **Power Circuit**: This MOSFET is suitable for power circuits such as DC-DC converters and switching power regulators. In these applications, the low on-resistance and fast switching capability of the MOSFET help reduce power losses and improve efficiency.
2. **Motor Control**: In motor control applications, especially those for medium-power motors, the HUFA75623P3-VB can be used to switch current. Its 18A load capacity makes it suitable for small to medium-sized motors, which are widely used in industrial and automotive fields.
3. **Battery Management System (BMS)**: This MOSFET operates efficiently at a lower gate voltage, making it suitable for battery management systems, which play a role in battery charge and discharge control. Its low on-resistance helps reduce energy losses and extend battery life.
4. **Load Switch**: HUFA75623P3-VB can be used as a load switch in various electronic devices to achieve controlled power distribution. Its robust design ensures reliable operation under different load conditions.
Overall, HUFA75623P3-VB is a reliable MOSFET suitable for various medium power applications with high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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