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HUFA75617D3-VB Product details
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HUFA75617D3-VB MOSFET Product Introduction
HUFA75617D3-VB is a high-performance N-type MOSFET in a TO-251 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) that can withstand ±20V. Its gate threshold voltage (Vth) is 1.8V, ensuring smooth conduction at a lower gate drive voltage. HUFA75617D3-VB uses Trench technology, has an on-resistance (RDS(ON)) of 110mΩ @ VGS = 10V, and can support a drain current (ID) of up to 15A. These features make it perform well in applications requiring high voltage and medium current, and is suitable for power management and switch control.
HUFA75617D3-VB is a high-performance N-type MOSFET in a TO-251 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) that can withstand ±20V. Its gate threshold voltage (Vth) is 1.8V, ensuring smooth conduction at a lower gate drive voltage. HUFA75617D3-VB uses Trench technology, has an on-resistance (RDS(ON)) of 110mΩ @ VGS = 10V, and can support a drain current (ID) of up to 15A. These features make it perform well in applications requiring high voltage and medium current, and is suitable for power management and switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HUFA75617D3-VB Detailed parameter description
- **Package type**: TO-251
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Package type**: TO-251
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench technology
Domain and module applications：
HUFA75617D3-VB Application Fields and Modules
The high voltage handling capability and moderate current support of HUFA75617D3-VB MOSFET make it excel in the following fields and modules:
1. **Power Management**: In high voltage DC-DC converters and switching power supplies (SMPS), HUFA75617D3-VB is able to handle voltages up to 100V and is suitable for power management systems that require high voltage conversion. Its moderate on-resistance and drain current handling capabilities make it an ideal switching element in power modules.
2. **Motor Drive**: In motor drive applications that require high voltage, HUFA75617D3-VB can be used to control the switching of motors. Although its drain current is 15A, its high voltage capability makes it suitable for some medium power motor drive systems.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems and electric power steering (EPS), the high voltage handling capability of HUFA75617D3-VB makes it suitable for these high voltage applications. Its low on-resistance helps improve power transmission efficiency and increase system reliability.
4. **Power protection**: In applications where circuits need to be protected from overvoltage, HUFA75617D3-VB can be used as a switching element in high-voltage protection circuits. Its high drain-source voltage capability ensures safe operation under high voltage conditions.
HUFA75617D3-VB's high voltage capability and moderate current handling characteristics make it excellent in these fields and can meet the needs of various applications with high voltage and current requirements.
The high voltage handling capability and moderate current support of HUFA75617D3-VB MOSFET make it excel in the following fields and modules:
1. **Power Management**: In high voltage DC-DC converters and switching power supplies (SMPS), HUFA75617D3-VB is able to handle voltages up to 100V and is suitable for power management systems that require high voltage conversion. Its moderate on-resistance and drain current handling capabilities make it an ideal switching element in power modules.
2. **Motor Drive**: In motor drive applications that require high voltage, HUFA75617D3-VB can be used to control the switching of motors. Although its drain current is 15A, its high voltage capability makes it suitable for some medium power motor drive systems.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems and electric power steering (EPS), the high voltage handling capability of HUFA75617D3-VB makes it suitable for these high voltage applications. Its low on-resistance helps improve power transmission efficiency and increase system reliability.
4. **Power protection**: In applications where circuits need to be protected from overvoltage, HUFA75617D3-VB can be used as a switching element in high-voltage protection circuits. Its high drain-source voltage capability ensures safe operation under high voltage conditions.
HUFA75617D3-VB's high voltage capability and moderate current handling characteristics make it excellent in these fields and can meet the needs of various applications with high voltage and current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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