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HUFA75617D3S-VB Product details
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1. Product Introduction
HUFA75617D3S-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET is 100V, which can adapt to higher voltage environments. Its gate-source voltage range is ±20V and the threshold voltage is 1.8V, ensuring stable operation under appropriate gate drive voltage. HUFA75617D3S-VB uses Trench technology, has an on-resistance of 114mΩ (@ VGS=10V), and supports a drain current of up to 15A. This makes it an ideal choice for high voltage applications, providing good switching performance and power handling capabilities, and is suitable for a variety of occasions with medium current requirements.
HUFA75617D3S-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage of this MOSFET is 100V, which can adapt to higher voltage environments. Its gate-source voltage range is ±20V and the threshold voltage is 1.8V, ensuring stable operation under appropriate gate drive voltage. HUFA75617D3S-VB uses Trench technology, has an on-resistance of 114mΩ (@ VGS=10V), and supports a drain current of up to 15A. This makes it an ideal choice for high voltage applications, providing good switching performance and power handling capabilities, and is suitable for a variety of occasions with medium current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 30W
- **Gate charge (Qg)**: About 50nC @ VGS=10V
- **Reverse recovery time (trr)**: 40ns
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 30W
- **Gate charge (Qg)**: About 50nC @ VGS=10V
- **Reverse recovery time (trr)**: 40ns
Domain and module applications：
3. Application fields and module examples
1. **Power management**: HUFA75617D3S-VB is suitable for power management systems that need to handle high voltages, such as high voltage DC-DC converters. Its low on-resistance and high current handling capability help improve power conversion efficiency, reduce energy loss, and are suitable for stable control of high voltage power supplies.
2. **Load switch**: In load switch applications, HUFA75617D3S-VB is able to effectively control and switch medium current loads. Its ability to adapt to high voltages makes it very suitable for load switches in switching power supplies to ensure the stability and reliability of current flow.
3. **Power tools and home appliances**: In power tools and home appliances, HUFA75617D3S-VB is able to handle current requirements in high voltage environments. Its high voltage tolerance and high power handling capability make it suitable for switching and control functions in these devices.
4. **Automotive Electronics**: This MOSFET is suitable for modules in automotive electronic systems that need to handle high voltages, such as battery management systems and electric power steering systems for electric vehicles. The high voltage and medium current handling capabilities of the HUFA75617D3S-VB can meet the needs of these demanding applications and provide reliable performance.
1. **Power management**: HUFA75617D3S-VB is suitable for power management systems that need to handle high voltages, such as high voltage DC-DC converters. Its low on-resistance and high current handling capability help improve power conversion efficiency, reduce energy loss, and are suitable for stable control of high voltage power supplies.
2. **Load switch**: In load switch applications, HUFA75617D3S-VB is able to effectively control and switch medium current loads. Its ability to adapt to high voltages makes it very suitable for load switches in switching power supplies to ensure the stability and reliability of current flow.
3. **Power tools and home appliances**: In power tools and home appliances, HUFA75617D3S-VB is able to handle current requirements in high voltage environments. Its high voltage tolerance and high power handling capability make it suitable for switching and control functions in these devices.
4. **Automotive Electronics**: This MOSFET is suitable for modules in automotive electronic systems that need to handle high voltages, such as battery management systems and electric power steering systems for electric vehicles. The high voltage and medium current handling capabilities of the HUFA75617D3S-VB can meet the needs of these demanding applications and provide reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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