HUFA75343S3ST-VB Product details
Product introduction:
HUFA75343S3ST-VB is a high-performance N-Channel MOSFET in TO263 package and designed based on advanced Trench technology. This MOSFET is designed to handle high current and medium voltage applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 3V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of HUFA75343S3ST-VB is 4mΩ at a gate voltage of 10V, indicating that the MOSFET has very low power consumption in high current applications, and its maximum drain current (ID) is 150A, which is suitable for applications that handle extremely high currents. This MOSFET provides a high-efficiency and reliable solution for a variety of electronic devices and systems with high power requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Power dissipation (PD)**: 3.0W @ 25°C
- **Input capacitance (Ciss)**: 3600pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn-on time (td(on)) = 60ns
- Turn-off time (td(off)) = 130ns
Domain and module applications:
1. **High power power management**: HUFA75343S3ST-VB is suitable for high power power management systems, such as high power DC-DC converters and AC-DC power modules. Its high current handling capability and low on-resistance characteristics effectively reduce energy loss and improve overall efficiency during power conversion, and are widely used in data centers, industrial power systems and other fields.
2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor drive modules of electric vehicles, HUFA75343S3ST-VB can be used as a high current switch. Its high current carrying capacity and low power consumption ensure fast charging of the battery and efficient driving of the motor, enhancing the overall performance and reliability of electric vehicles.
3. **Solar Inverter**: In the solar inverter, HUFA75343S3ST-VB can be used as the main power switch. Its high current handling capability and low on-resistance improve the efficiency and reliability of the inverter, thereby improving the overall performance of the solar power generation system.
4. **Industrial Automation and Motor Control**: This MOSFET is suitable for high-current motor control and load switching in industrial automation systems. Its fast switching characteristics and low power consumption design make it excel in control accuracy and high-efficiency operation, and is widely used in robotics, automation equipment and motor drive systems.
Technical support:
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