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HUFA75343S3ST-VB Product details

Product introduction:

1. HUFA75343S3ST-VB Product Introduction

HUFA75343S3ST-VB is a high-performance N-Channel MOSFET in TO263 package and designed based on advanced Trench technology. This MOSFET is designed to handle high current and medium voltage applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 3V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of HUFA75343S3ST-VB is 4mΩ at a gate voltage of 10V, indicating that the MOSFET has very low power consumption in high current applications, and its maximum drain current (ID) is 150A, which is suitable for applications that handle extremely high currents. This MOSFET provides a high-efficiency and reliable solution for a variety of electronic devices and systems with high power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. HUFA75343S3ST-VB Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Power dissipation (PD)**: 3.0W @ 25°C
- **Input capacitance (Ciss)**: 3600pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn-on time (td(on)) = 60ns
- Turn-off time (td(off)) = 130ns

Domain and module applications:

III. Application fields and module examples of HUFA75343S3ST-VB

1. **High power power management**: HUFA75343S3ST-VB is suitable for high power power management systems, such as high power DC-DC converters and AC-DC power modules. Its high current handling capability and low on-resistance characteristics effectively reduce energy loss and improve overall efficiency during power conversion, and are widely used in data centers, industrial power systems and other fields.

2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor drive modules of electric vehicles, HUFA75343S3ST-VB can be used as a high current switch. Its high current carrying capacity and low power consumption ensure fast charging of the battery and efficient driving of the motor, enhancing the overall performance and reliability of electric vehicles.

3. **Solar Inverter**: In the solar inverter, HUFA75343S3ST-VB can be used as the main power switch. Its high current handling capability and low on-resistance improve the efficiency and reliability of the inverter, thereby improving the overall performance of the solar power generation system.

4. **Industrial Automation and Motor Control**: This MOSFET is suitable for high-current motor control and load switching in industrial automation systems. Its fast switching characteristics and low power consumption design make it excel in control accuracy and high-efficiency operation, and is widely used in robotics, automation equipment and motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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