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HUFA75339S3S-VB Product details
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Product Introduction
HUFA75339S3S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device uses Trench technology, has a maximum drain-source voltage of 60V, and can handle drain currents up to 75A. Its low on-resistance (12mΩ@VGS=4.5V and 11mΩ@VGS=10V) ensures low power consumption and efficient energy conversion during switching operations. HUFA75339S3S-VB is an ideal choice for maintaining stability and efficiency in high-power and high-density applications.
HUFA75339S3S-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The device uses Trench technology, has a maximum drain-source voltage of 60V, and can handle drain currents up to 75A. Its low on-resistance (12mΩ@VGS=4.5V and 11mΩ@VGS=10V) ensures low power consumption and efficient energy conversion during switching operations. HUFA75339S3S-VB is an ideal choice for maintaining stability and efficiency in high-power and high-density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and module examples
1. **Power Management**: HUFA75339S3S-VB excels in power management applications, especially for high-efficiency DC-DC converters and regulators. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve conversion efficiency, making it very suitable for use in power modules that require efficient energy conversion.
2. **Motor Drive**: This MOSFET is also suitable for motor drive applications such as brushless DC motor (BLDC) and stepper motor control. Its high current handling capability and low on-resistance ensure high efficiency and reliability in high-power motor applications, helping to stabilize motor operation and improve system performance.
3. **Automotive Electronics**: In automotive electronic systems, HUFA75339S3S-VB is an ideal choice for power management, motor control, and electronic control units (ECUs). Its high current handling capability and high voltage withstand capability can meet the stringent requirements of the automotive environment, ensuring system reliability and stability.
4. **Load switch**: In load switch modules, such as industrial control and battery management systems, HUFA75339S3S-VB provides efficient switching operation and reliable performance, suitable for handling large current loads, ensuring stable operation of equipment under high load conditions.
These application examples demonstrate the wide applicability and superior performance of HUFA75339S3S-VB in multiple fields, making it an ideal choice for a variety of applications requiring high power, high efficiency and high reliability.
1. **Power Management**: HUFA75339S3S-VB excels in power management applications, especially for high-efficiency DC-DC converters and regulators. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve conversion efficiency, making it very suitable for use in power modules that require efficient energy conversion.
2. **Motor Drive**: This MOSFET is also suitable for motor drive applications such as brushless DC motor (BLDC) and stepper motor control. Its high current handling capability and low on-resistance ensure high efficiency and reliability in high-power motor applications, helping to stabilize motor operation and improve system performance.
3. **Automotive Electronics**: In automotive electronic systems, HUFA75339S3S-VB is an ideal choice for power management, motor control, and electronic control units (ECUs). Its high current handling capability and high voltage withstand capability can meet the stringent requirements of the automotive environment, ensuring system reliability and stability.
4. **Load switch**: In load switch modules, such as industrial control and battery management systems, HUFA75339S3S-VB provides efficient switching operation and reliable performance, suitable for handling large current loads, ensuring stable operation of equipment under high load conditions.
These application examples demonstrate the wide applicability and superior performance of HUFA75339S3S-VB in multiple fields, making it an ideal choice for a variety of applications requiring high power, high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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