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HUFA75337S3ST-VB Product details
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Product Introduction
HUFA75337S3ST-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and is suitable for power management applications that require high efficiency and low power consumption. Its maximum drain voltage is 60V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. At VGS=4.5V, the on-resistance is 12mΩ, which decreases to 11mΩ at VGS=10V. HUFA75337S3ST-VB can handle continuous drain currents of up to 75A and is suitable for various applications requiring high current handling capabilities.
HUFA75337S3ST-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and is suitable for power management applications that require high efficiency and low power consumption. Its maximum drain voltage is 60V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. At VGS=4.5V, the on-resistance is 12mΩ, which decreases to 11mΩ at VGS=10V. HUFA75337S3ST-VB can handle continuous drain currents of up to 75A and is suitable for various applications requiring high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
The design and performance of the HUFA75337S3ST-VB MOSFET make it suitable for a variety of applications, especially in power management applications that require high current and low power consumption:
1. **Power Management System**: In high-efficiency power management systems, such as switch mode power supplies (SMPS) and DC-DC converters, the HUFA75337S3ST-VB is able to provide low on-resistance and high current handling capabilities, helping to reduce power losses and improve system efficiency.
2. **Electric Vehicle**: This MOSFET is very suitable for electric vehicle applications, such as electric drive systems and battery management systems. It is able to carry high current loads and provide stable current control, ensuring efficient and reliable operation of electric vehicle systems.
3. **Industrial Automation**: In industrial automation systems, such as motor control and industrial power modules, the HUFA75337S3ST-VB as a switching element can provide excellent current handling capabilities and low power consumption characteristics, suitable for high-load industrial environments.
4. **Consumer Electronics**: In consumer electronics, such as power adapters and high-efficiency battery chargers, this MOSFET can provide reliable switching performance, ensuring high performance and long life of the equipment.
These application examples show that HUFA75337S3ST-VB has excellent performance in handling medium voltage and high current environments, and is suitable for power management solutions that require high performance, low power consumption and high reliability.
The design and performance of the HUFA75337S3ST-VB MOSFET make it suitable for a variety of applications, especially in power management applications that require high current and low power consumption:
1. **Power Management System**: In high-efficiency power management systems, such as switch mode power supplies (SMPS) and DC-DC converters, the HUFA75337S3ST-VB is able to provide low on-resistance and high current handling capabilities, helping to reduce power losses and improve system efficiency.
2. **Electric Vehicle**: This MOSFET is very suitable for electric vehicle applications, such as electric drive systems and battery management systems. It is able to carry high current loads and provide stable current control, ensuring efficient and reliable operation of electric vehicle systems.
3. **Industrial Automation**: In industrial automation systems, such as motor control and industrial power modules, the HUFA75337S3ST-VB as a switching element can provide excellent current handling capabilities and low power consumption characteristics, suitable for high-load industrial environments.
4. **Consumer Electronics**: In consumer electronics, such as power adapters and high-efficiency battery chargers, this MOSFET can provide reliable switching performance, ensuring high performance and long life of the equipment.
These application examples show that HUFA75337S3ST-VB has excellent performance in handling medium voltage and high current environments, and is suitable for power management solutions that require high performance, low power consumption and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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