HUFA75333S3S-VB Product details
Product introduction:
HUFA75333S3S-VB is a high-performance N-Channel MOSFET packaged in TO263, using advanced Trench technology. This MOSFET is designed to handle high current and medium voltage applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, enabling it to be stably turned on at a lower gate voltage. The on-resistance (RDS(ON)) of HUFA75333S3S-VB is 12mΩ at a gate voltage of 4.5V and 11mΩ at a gate voltage of 10V, indicating that the MOSFET has extremely low power consumption in high current applications. The maximum drain current (ID) is 75A, making it suitable for applications that require high current handling. The overall design is designed to provide high performance and reliability to support a variety of demanding electronic devices and systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Power dissipation (PD)**: 2.0W @ 25°C
- **Input capacitance (Ciss)**: 2200pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn on time (td(on)) = 55ns
- Turn off time (td(off)) = 120ns
Domain and module applications:
1. **Power converter**: HUFA75333S3S-VB is very suitable for high-current power converters, such as DC-DC converters. Its high current handling capability and low on-resistance ensure low power consumption of the converter under high-efficiency operation, suitable for power-intensive applications such as data center power supplies and high-performance computing devices.
2. **Electric vehicle**: In electric vehicles (EVs) and related charging systems, this MOSFET can be used in battery management systems (BMS) and motor drive modules. Its high current handling capability can support fast charging of batteries and efficient driving of motors, ensuring the overall performance and reliability of electric vehicles.
3. **Solar inverter**: In solar inverters, HUFA75333S3S-VB can be used as the main power switch. Its high current and low on-resistance characteristics improve the efficiency and reliability of the inverter, thereby improving the overall performance of the solar power generation system.
4. **Industrial Automation**: This MOSFET is suitable for motor control and high current load switching in industrial automation systems. Its fast switching capability and low power consumption make it excellent in precise control and high-efficiency operation, and is widely used in robotics and automation equipment.
Technical support:
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