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HUFA75332S3ST-VB Product details
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HUFA75332S3ST-VB MOSFET Product Introduction
HUFA75332S3ST-VB is a high-performance single N-channel MOSFET in a TO263 package. This MOSFET is designed for medium voltage applications and can withstand drain-source voltages (VDS) up to 60V and gate-source voltages (VGS) of ±20V. It uses Trench technology and has low on-resistance and excellent switching performance. At a gate voltage of 4.5V, its on-resistance is 12mΩ and at 10V it is 11mΩ, and it can handle drain currents of up to 75A. This makes the HUFA75332S3ST-VB very suitable for high-power and high-current applications.
HUFA75332S3ST-VB is a high-performance single N-channel MOSFET in a TO263 package. This MOSFET is designed for medium voltage applications and can withstand drain-source voltages (VDS) up to 60V and gate-source voltages (VGS) of ±20V. It uses Trench technology and has low on-resistance and excellent switching performance. At a gate voltage of 4.5V, its on-resistance is 12mΩ and at 10V it is 11mΩ, and it can handle drain currents of up to 75A. This makes the HUFA75332S3ST-VB very suitable for high-power and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUFA75332S3ST-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The high current handling capability and low on-resistance of the HUFA75332S3ST-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-efficiency power conversion**: The HUFA75332S3ST-VB is ideal for high-efficiency power conversion applications such as DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to maintain high-efficiency power conversion performance under high-load conditions and reduce energy losses.
2. **Motor drive systems**: In motor drive systems that need to handle high currents, such as power tools and industrial motors, the high current capability and excellent switching performance of the HUFA75332S3ST-VB enable it to provide reliable motor control. These systems require MOSFETs that can withstand large currents and high power loads.
3. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems, electric vehicle chargers, and power distribution modules, the HUFA75332S3ST-VB is capable of handling high currents and withstanding high voltages, making it suitable for use in automotive environments. Its stable performance ensures the reliability and efficiency of automotive electronic systems.
4. **Industrial Automation Equipment**: In industrial automation equipment, the HUFA75332S3ST-VB can be used in applications such as motor control, power regulation, and power switching. Its high current handling capability and low on-resistance enable it to maintain excellent performance under high power and high current conditions, making it suitable for a variety of industrial automation scenarios.
The high current handling capability and low on-resistance of the HUFA75332S3ST-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-efficiency power conversion**: The HUFA75332S3ST-VB is ideal for high-efficiency power conversion applications such as DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to maintain high-efficiency power conversion performance under high-load conditions and reduce energy losses.
2. **Motor drive systems**: In motor drive systems that need to handle high currents, such as power tools and industrial motors, the high current capability and excellent switching performance of the HUFA75332S3ST-VB enable it to provide reliable motor control. These systems require MOSFETs that can withstand large currents and high power loads.
3. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems, electric vehicle chargers, and power distribution modules, the HUFA75332S3ST-VB is capable of handling high currents and withstanding high voltages, making it suitable for use in automotive environments. Its stable performance ensures the reliability and efficiency of automotive electronic systems.
4. **Industrial Automation Equipment**: In industrial automation equipment, the HUFA75332S3ST-VB can be used in applications such as motor control, power regulation, and power switching. Its high current handling capability and low on-resistance enable it to maintain excellent performance under high power and high current conditions, making it suitable for a variety of industrial automation scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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