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HUFA75321S3S-VB Product details
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Product Introduction
HUFA75321S3S-VB is a high-efficiency N-channel power MOSFET in TO263 package, designed for medium voltage and high current applications. The device has a drain-source voltage of 60V and a drain current capability of 50A. It uses advanced Trench technology to enable it to handle high current loads while providing low on-resistance. This MOSFET is suitable for a variety of occasions requiring efficient switching and power management, such as power management systems, automotive electronic equipment, and industrial automation control.
HUFA75321S3S-VB is a high-efficiency N-channel power MOSFET in TO263 package, designed for medium voltage and high current applications. The device has a drain-source voltage of 60V and a drain current capability of 50A. It uses advanced Trench technology to enable it to handle high current loads while providing low on-resistance. This MOSFET is suitable for a variety of occasions requiring efficient switching and power management, such as power management systems, automotive electronic equipment, and industrial automation control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Application fields and modules
HUFA75321S3S-VB MOSFET is suitable for the following fields and modules due to its high current handling capability and low on-resistance at medium voltage:
1. **Power management system**: This MOSFET is ideal for use in switch mode power supplies (SMPS), DC-DC converters, and power regulators. Its 60V drain-source voltage and up to 50A current carrying capacity enable it to efficiently control and convert electrical energy and improve the performance of power systems.
2. **Automotive electronics**: HUFA75321S3S-VB can be used in a variety of automotive electronics applications, such as battery management systems, on-board power modules, and LED lighting control. Its high current capability and low on-resistance ensure reliability and efficiency in automotive environments.
3. **Industrial automation and control**: In industrial automation equipment, this MOSFET can be used to drive motors, control actuators, and other high current loads. Its excellent current handling capability and voltage resistance enable it to work stably in harsh industrial environments.
4. **Load switch and protection circuit**: HUFA75321S3S-VB can be applied to high current load switch circuits that require precise control and protection. It is suitable for overcurrent protection circuits and other high power load switch control to ensure that the system can still operate safely under high load.
In summary, HUFA75321S3S-VB MOSFET is widely used in power management, automotive electronics, industrial automation and other fields with its excellent voltage and current handling capabilities, low on-resistance, and good switching performance. It is an ideal choice for various high-performance electronic systems.
HUFA75321S3S-VB MOSFET is suitable for the following fields and modules due to its high current handling capability and low on-resistance at medium voltage:
1. **Power management system**: This MOSFET is ideal for use in switch mode power supplies (SMPS), DC-DC converters, and power regulators. Its 60V drain-source voltage and up to 50A current carrying capacity enable it to efficiently control and convert electrical energy and improve the performance of power systems.
2. **Automotive electronics**: HUFA75321S3S-VB can be used in a variety of automotive electronics applications, such as battery management systems, on-board power modules, and LED lighting control. Its high current capability and low on-resistance ensure reliability and efficiency in automotive environments.
3. **Industrial automation and control**: In industrial automation equipment, this MOSFET can be used to drive motors, control actuators, and other high current loads. Its excellent current handling capability and voltage resistance enable it to work stably in harsh industrial environments.
4. **Load switch and protection circuit**: HUFA75321S3S-VB can be applied to high current load switch circuits that require precise control and protection. It is suitable for overcurrent protection circuits and other high power load switch control to ensure that the system can still operate safely under high load.
In summary, HUFA75321S3S-VB MOSFET is widely used in power management, automotive electronics, industrial automation and other fields with its excellent voltage and current handling capabilities, low on-resistance, and good switching performance. It is an ideal choice for various high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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