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HUFA75307D3S-VB Product details
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1. HUFA75307D3S-VB Product Introduction
HUFA75307D3S-VB is a single-N-Channel MOSFET packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. HUFA75307D3S-VB uses advanced Trench process technology to provide a low on-resistance (RDS(ON)), which is 85mΩ at a 4.5V gate drive and 73mΩ at a 10V gate drive. Its maximum drain current (ID) is 18A. These characteristics make this MOSFET perform well in high-efficiency, high-current switching applications, and is suitable for use in various power supplies and drive systems.
HUFA75307D3S-VB is a single-N-Channel MOSFET packaged in TO252. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. HUFA75307D3S-VB uses advanced Trench process technology to provide a low on-resistance (RDS(ON)), which is 85mΩ at a 4.5V gate drive and 73mΩ at a 10V gate drive. Its maximum drain current (ID) is 18A. These characteristics make this MOSFET perform well in high-efficiency, high-current switching applications, and is suitable for use in various power supplies and drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HUFA75307D3S-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)@VGS=4.5V**: 85mΩ
- **RDS(ON)@VGS=10V**: 73mΩ
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)@VGS=4.5V**: 85mΩ
- **RDS(ON)@VGS=10V**: 73mΩ
- **ID (drain current)**: 18A
- **Technology**: Trench
Domain and module applications：
III. HUFA75307D3S-VB Application Fields and Module Examples
1. **Switching Power Supply (SMPS)**: HUFA75307D3S-VB performs well in switching power supplies (SMPS). Its high current handling capability and low on-resistance make it suitable for power conversion modules, which can effectively reduce power loss and improve power efficiency. This is essential for computer power supplies, communication equipment power supplies, and other high-efficiency power applications.
2. **Electric Vehicles**: In the power management system of electric vehicles, this MOSFET can be used as a switching component in the battery management system (BMS). Due to its high withstand voltage of 60V and high current handling capability of 18A, it is suitable for key modules such as battery protection, power conversion, and motor control.
3. **Industrial Automation**: HUFA75307D3S-VB is also widely used in industrial automation equipment, such as high-power switching and motor drive control. Its high current capability and low switching loss make it an ideal choice for industrial control systems, which can improve the reliability and performance of equipment.
4. **Inverter**: In solar inverters and other power inverters, the high voltage capability and low on-resistance of this MOSFET help improve the efficiency and stability of the system. This is very important for improving the power output and power conversion performance of the inverter.
The high voltage, high current capability and low on-resistance characteristics of HUFA75307D3S-VB make it excel in a variety of high-performance electronic applications, providing a reliable solution for power conversion and control systems in multiple fields.
1. **Switching Power Supply (SMPS)**: HUFA75307D3S-VB performs well in switching power supplies (SMPS). Its high current handling capability and low on-resistance make it suitable for power conversion modules, which can effectively reduce power loss and improve power efficiency. This is essential for computer power supplies, communication equipment power supplies, and other high-efficiency power applications.
2. **Electric Vehicles**: In the power management system of electric vehicles, this MOSFET can be used as a switching component in the battery management system (BMS). Due to its high withstand voltage of 60V and high current handling capability of 18A, it is suitable for key modules such as battery protection, power conversion, and motor control.
3. **Industrial Automation**: HUFA75307D3S-VB is also widely used in industrial automation equipment, such as high-power switching and motor drive control. Its high current capability and low switching loss make it an ideal choice for industrial control systems, which can improve the reliability and performance of equipment.
4. **Inverter**: In solar inverters and other power inverters, the high voltage capability and low on-resistance of this MOSFET help improve the efficiency and stability of the system. This is very important for improving the power output and power conversion performance of the inverter.
The high voltage, high current capability and low on-resistance characteristics of HUFA75307D3S-VB make it excel in a variety of high-performance electronic applications, providing a reliable solution for power conversion and control systems in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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