HUF76645S3S-VB Product details
Product introduction:
HUF76645S3S-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Using Trench technology, this MOSFET has excellent conduction performance and low power consumption characteristics, suitable for various circuit designs with high power and high efficiency requirements. Its maximum drain voltage is 100V, the gate-source voltage range is ±20V, and the threshold voltage is 2.5V. At VGS=4.5V, the on-resistance is 23mΩ, and it drops to 10mΩ at VGS=10V, capable of supporting up to 100A of continuous drain current. HUF76645S3S-VB is designed to provide stable high current handling capability and is suitable for operation in high power environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications:
HUF76645S3S-VB MOSFET has a wide range of applications in multiple fields, especially where high voltage and high current are required:
1. **High Power Power Management**: Due to its low on-resistance and high current capability, HUF76645S3S-VB is well suited for high power power management systems such as switch mode power supplies (SMPS) and power conversion modules. It is able to operate efficiently at high voltages, reduce power losses, and improve system efficiency.
2. **Electric Vehicle**: In electric vehicle applications, such as motor drives, charging systems, and battery management systems, HUF76645S3S-VB is able to handle high current loads and provide stable performance. Its high current handling capability and low on-resistance make it suitable for high power electric vehicle systems.
3. **Industrial Power and Control Systems**: In industrial power modules, such as power adapters and industrial control systems, HUF76645S3S-VB provides reliable current control and voltage regulation as a switching element. Its high voltage tolerance and low power consumption characteristics help ensure the stability and efficiency of industrial equipment.
4. **Communication Equipment**: In communication equipment and base station power systems, HUF76645S3S-VB can meet the high voltage and high current requirements to ensure the reliability and performance of the equipment. It can effectively handle the high power requirements in communication equipment and provide a stable power supply.
These application examples show the excellent performance of HUF76645S3S-VB MOSFET in high voltage and high power environments, making it an ideal choice for a variety of high power power management and current control applications.
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