中文
English
HUF76645S3ST-VB Product details
Back to previous pageProduct introduction：
Product Introduction
HUF76645S3ST-VB is a high voltage N-channel power MOSFET in TO263 package. It is designed for applications requiring high voltage and high current, with a drain-source voltage of 100V and a drain current capability of 100A. This MOSFET uses Trench technology, providing excellent switching performance and low on-resistance, suitable for applications such as high power density power management, motor drive and load switching.
HUF76645S3ST-VB is a high voltage N-channel power MOSFET in TO263 package. It is designed for applications requiring high voltage and high current, with a drain-source voltage of 100V and a drain current capability of 100A. This MOSFET uses Trench technology, providing excellent switching performance and low on-resistance, suitable for applications such as high power density power management, motor drive and load switching.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
HUF76645S3ST-VB MOSFET is suitable for a variety of applications requiring high power and high efficiency due to its high voltage and high current handling capabilities, including:
1. **Power management system**: This MOSFET is particularly suitable for high voltage power management modules such as DC-DC converters and power regulators. The 100V drain-source voltage and low on-resistance enable it to effectively improve the efficiency and stability of the power system under high voltage conditions.
2. **Motor drive system**: The HUF76645S3ST-VB can handle drain currents up to 100A and is suitable for motor drive applications such as electric vehicles, power tools, and industrial automation equipment. Its high current carrying capacity and low on-resistance ensure efficient operation of the motor under high load conditions.
3. **Load switching applications**: This MOSFET performs well in situations where high current load switching is required. It can be used in high-voltage load switches, overcurrent protection circuits, and various high-power load control applications, providing reliable switching performance and protection functions.
4. **Automotive Electronic Systems**: Due to its ability to handle high voltage and high current, HUF76645S3ST-VB is very suitable for use in automotive electronic systems, such as on-board power management, LED light control, and battery management systems. It can meet the needs of automotive electronic equipment for high power and high reliability.
In summary, HUF76645S3ST-VB, with its high voltage, high current handling capability and low on-resistance, is widely used in power management, motor drive and load switching applications that require high power density and high efficiency, providing high-quality performance and reliability for various high-demand electronic systems.
HUF76645S3ST-VB MOSFET is suitable for a variety of applications requiring high power and high efficiency due to its high voltage and high current handling capabilities, including:
1. **Power management system**: This MOSFET is particularly suitable for high voltage power management modules such as DC-DC converters and power regulators. The 100V drain-source voltage and low on-resistance enable it to effectively improve the efficiency and stability of the power system under high voltage conditions.
2. **Motor drive system**: The HUF76645S3ST-VB can handle drain currents up to 100A and is suitable for motor drive applications such as electric vehicles, power tools, and industrial automation equipment. Its high current carrying capacity and low on-resistance ensure efficient operation of the motor under high load conditions.
3. **Load switching applications**: This MOSFET performs well in situations where high current load switching is required. It can be used in high-voltage load switches, overcurrent protection circuits, and various high-power load control applications, providing reliable switching performance and protection functions.
4. **Automotive Electronic Systems**: Due to its ability to handle high voltage and high current, HUF76645S3ST-VB is very suitable for use in automotive electronic systems, such as on-board power management, LED light control, and battery management systems. It can meet the needs of automotive electronic equipment for high power and high reliability.
In summary, HUF76645S3ST-VB, with its high voltage, high current handling capability and low on-resistance, is widely used in power management, motor drive and load switching applications that require high power density and high efficiency, providing high-quality performance and reliability for various high-demand electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
