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HUF76645P3S-VB Product details
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1. HUF76645P3S-VB Product Introduction
HUF76645P3S-VB is a high voltage N-Channel MOSFET packaged in TO263, using advanced Trench technology. Designed for applications that need to handle high voltage and high current, the device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 2.5V, which means that the MOSFET can be turned on stably at a lower gate voltage. The on-resistance (RDS(ON)) of HUF76645P3S-VB is 23mΩ at a gate voltage of 4.5V and 10mΩ at a gate voltage of 10V. This makes it perform well in high current applications, with a maximum drain current (ID) of 100A, ensuring high efficiency and low power consumption. This MOSFET is suitable for various applications that require high efficiency and high power handling.
HUF76645P3S-VB is a high voltage N-Channel MOSFET packaged in TO263, using advanced Trench technology. Designed for applications that need to handle high voltage and high current, the device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) is 2.5V, which means that the MOSFET can be turned on stably at a lower gate voltage. The on-resistance (RDS(ON)) of HUF76645P3S-VB is 23mΩ at a gate voltage of 4.5V and 10mΩ at a gate voltage of 10V. This makes it perform well in high current applications, with a maximum drain current (ID) of 100A, ensuring high efficiency and low power consumption. This MOSFET is suitable for various applications that require high efficiency and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HUF76645P3S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Power dissipation (PD)**: 3.0W @ 25°C
- **Input capacitance (Ciss)**: 3500pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn on time (td(on)) = 65ns
- Turn off time (td(off)) = 140ns
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Power dissipation (PD)**: 3.0W @ 25°C
- **Input capacitance (Ciss)**: 3500pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn on time (td(on)) = 65ns
- Turn off time (td(off)) = 140ns
Domain and module applications：
III. Application fields and module examples of HUF76645P3S-VB
1. **High-power power converter**: HUF76645P3S-VB is suitable for high-power power converters such as DC-DC converters and AC-DC power modules. Its high voltage and low on-resistance characteristics enable it to improve power conversion efficiency and reduce energy loss, making it suitable for applications such as data center power supplies and large industrial power supplies.
2. **Electric vehicles and charging piles**: In electric vehicles (EV) and charging pile systems, HUF76645P3S-VB can be used as a key switch in the battery management system (BMS) and motor drive. Its high current and high voltage handling capabilities ensure safe charging of the battery and efficient operation of the motor.
3. **Solar inverter**: In solar inverters, this MOSFET can be used as the main power switch. Its high voltage carrying capacity and low on-resistance can improve the efficiency of the inverter and ensure the stability and reliability of the solar power generation system.
4. **Motor drive system**: HUF76645P3S-VB is suitable for motor drive systems that require high current and high voltage. It can be used as a motor control switch in industrial automation and robotics to improve the performance and control accuracy of the motor.
1. **High-power power converter**: HUF76645P3S-VB is suitable for high-power power converters such as DC-DC converters and AC-DC power modules. Its high voltage and low on-resistance characteristics enable it to improve power conversion efficiency and reduce energy loss, making it suitable for applications such as data center power supplies and large industrial power supplies.
2. **Electric vehicles and charging piles**: In electric vehicles (EV) and charging pile systems, HUF76645P3S-VB can be used as a key switch in the battery management system (BMS) and motor drive. Its high current and high voltage handling capabilities ensure safe charging of the battery and efficient operation of the motor.
3. **Solar inverter**: In solar inverters, this MOSFET can be used as the main power switch. Its high voltage carrying capacity and low on-resistance can improve the efficiency of the inverter and ensure the stability and reliability of the solar power generation system.
4. **Motor drive system**: HUF76645P3S-VB is suitable for motor drive systems that require high current and high voltage. It can be used as a motor control switch in industrial automation and robotics to improve the performance and control accuracy of the motor.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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