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HUF76639S3ST-VB Product details

Product introduction:

HUF76639S3ST-VB MOSFET Product Introduction

HUF76639S3ST-VB is a high-performance N-type MOSFET in a TO-263 package for high-voltage and high-current applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) that can withstand ±20V. Its gate threshold voltage (Vth) is 1.8V, ensuring reliable turn-on at a lower gate drive voltage. HUF76639S3ST-VB uses Trench technology, has an on-resistance (RDS(ON)) of 20mΩ @ VGS = 10V, and can withstand a drain current (ID) of up to 70A, making it an excellent performer in high-efficiency power management and high-current load applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 1.8V 70A 20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 1.8V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 1.8V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
HUF76639S3ST-VB Detailed parameter description

- **Package type**: TO-263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology

Domain and module applications:

HUF76639S3ST-VB Applications and Modules

The high voltage, high current handling capability and low on-resistance of the HUF76639S3ST-VB MOSFET make it suitable for multiple fields:

1. **Power Conversion and Management**: HUF76639S3ST-VB is very suitable as a switching element in high-efficiency DC-DC converters and switching power supplies (SMPS). Its high voltage withstand capability of 100V and high current handling capability of 70A can significantly improve the efficiency of power systems, especially in power modules that require high power density, such as telecommunication power supplies and server power supplies.

2. **Motor Control**: In motor control applications that require high current and high voltage, such as industrial motor drives and power tools, HUF76639S3ST-VB provides low on-resistance and high current capability, which can reduce heat loss and improve system reliability and efficiency. Its Trench technology ensures stable performance in high-power applications.

3. **Automotive Electronics**: This MOSFET is suitable for high-current switching applications in automotive electrical systems, such as electric power steering (EPS), battery management systems (BMS), and other on-board high-current switching modules. The high voltage and high current characteristics of HUF76639S3ST-VB enable it to withstand the harsh conditions in automotive electrical systems and provide reliable performance.

4. **Solar Inverter**: In solar inverters and photovoltaic power generation systems, HUF76639S3ST-VB can be used for efficient power conversion modules. Its high voltage and high current handling capabilities make it suitable for these applications that require high power and high efficiency, ensuring stable energy conversion and transmission.

The design and features of HUF76639S3ST-VB enable it to excel in these high-voltage, high-current applications and meet the performance requirements in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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