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HUF76629D3-VB Product details
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Product Introduction
HUF76629D3-VB is a high-performance N-channel MOSFET in TO252 package, designed to handle high voltage and medium current applications. Manufactured based on Trench technology, this MOSFET provides low on-resistance and fast switching speed, and can provide stable performance in a variety of applications requiring high efficiency. Its maximum drain voltage is 100V and the gate-source voltage range is ±20V. The on-resistance of HUF76629D3-VB is 35mΩ at VGS=4.5V, which drops to 30mΩ at VGS=10V, and can withstand a continuous drain current of up to 40A. This product is particularly suitable for use in systems with higher voltages and lower power loss requirements.
HUF76629D3-VB is a high-performance N-channel MOSFET in TO252 package, designed to handle high voltage and medium current applications. Manufactured based on Trench technology, this MOSFET provides low on-resistance and fast switching speed, and can provide stable performance in a variety of applications requiring high efficiency. Its maximum drain voltage is 100V and the gate-source voltage range is ±20V. The on-resistance of HUF76629D3-VB is 35mΩ at VGS=4.5V, which drops to 30mΩ at VGS=10V, and can withstand a continuous drain current of up to 40A. This product is particularly suitable for use in systems with higher voltages and lower power loss requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
The HUF76629D3-VB MOSFET has a wide range of applications in the following areas:
1. **Automotive Electronics**: Due to its high voltage handling capability and medium current capability, the HUF76629D3-VB is suitable for a variety of applications in the automotive electronics field, such as power management, DC-DC converters, and motor control modules for electric vehicles. Its low on-resistance helps improve system efficiency, reduce heat generation, and extend the life of the equipment.
2. **Power Management**: This MOSFET is ideal for use in power management systems such as switching power supplies (SMPS), power conversion modules, and regulated power supplies. These applications often require MOSFETs that can operate efficiently under high voltage conditions, and the performance characteristics of the HUF76629D3-VB make it an ideal choice.
3. **Industrial Automation**: In industrial automation systems such as motor drives, power adapters, and control systems, the HUF76629D3-VB can be used as a power switching element to provide reliable current control and voltage regulation. Its high voltage withstand capability and low on-resistance help these systems maintain efficient operation in harsh industrial environments.
4. **Communication Equipment**: In communication equipment, especially those applications requiring high voltage and medium current, such as base station power supplies and communication network power management modules, the high performance and reliability of the HUF76629D3-VB enable it to provide stable power supply and protection.
These application examples show that the HUF76629D3-VB MOSFET has excellent performance in high voltage applications and is suitable for use in a variety of systems requiring reliable power control and low power consumption.
The HUF76629D3-VB MOSFET has a wide range of applications in the following areas:
1. **Automotive Electronics**: Due to its high voltage handling capability and medium current capability, the HUF76629D3-VB is suitable for a variety of applications in the automotive electronics field, such as power management, DC-DC converters, and motor control modules for electric vehicles. Its low on-resistance helps improve system efficiency, reduce heat generation, and extend the life of the equipment.
2. **Power Management**: This MOSFET is ideal for use in power management systems such as switching power supplies (SMPS), power conversion modules, and regulated power supplies. These applications often require MOSFETs that can operate efficiently under high voltage conditions, and the performance characteristics of the HUF76629D3-VB make it an ideal choice.
3. **Industrial Automation**: In industrial automation systems such as motor drives, power adapters, and control systems, the HUF76629D3-VB can be used as a power switching element to provide reliable current control and voltage regulation. Its high voltage withstand capability and low on-resistance help these systems maintain efficient operation in harsh industrial environments.
4. **Communication Equipment**: In communication equipment, especially those applications requiring high voltage and medium current, such as base station power supplies and communication network power management modules, the high performance and reliability of the HUF76629D3-VB enable it to provide stable power supply and protection.
These application examples show that the HUF76629D3-VB MOSFET has excellent performance in high voltage applications and is suitable for use in a variety of systems requiring reliable power control and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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