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HUF76629D3S-VB Product details
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Product Introduction
HUF76629D3S-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high voltage and medium current applications. With a drain-source voltage of 100V and a drain current capability of 40A, the device can provide reliable performance in a higher voltage environment. By using Trench technology, this MOSFET achieves low on-resistance and excellent switching efficiency, making it an ideal choice for various power management, load switching and drive circuits.
HUF76629D3S-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high voltage and medium current applications. With a drain-source voltage of 100V and a drain current capability of 40A, the device can provide reliable performance in a higher voltage environment. By using Trench technology, this MOSFET achieves low on-resistance and excellent switching efficiency, making it an ideal choice for various power management, load switching and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
Domain and module applications：
Application fields and modules
The high voltage tolerance and moderate current handling capability of HUF76629D3S-VB MOSFET make it have a wide range of application potential in multiple fields and modules:
1. **Power management system**: This MOSFET performs well in high-voltage power management systems, especially in DC-DC converters and power regulators. The 100V drain-source voltage and low on-resistance enable it to efficiently handle higher input voltages, improving the overall energy efficiency and stability of the system.
2. **Automotive electronics**: HUF76629D3S-VB is ideal for use in automotive electronic systems, such as on-board power management modules and various on-board load switch applications. Its high voltage capability can meet the requirements of many on-board applications, such as electric power steering systems and battery management systems.
3. **Industrial automation and control**: In industrial automation equipment, this MOSFET can be used in high-voltage drive and control circuits, such as drive motors and actuators. Its high current handling capability and voltage resistance enable it to provide reliable performance in harsh industrial environments.
4. **Load switch application**: HUF76629D3S-VB is suitable for high voltage load switch applications, and can reliably switch power in high voltage circuits to ensure safe and stable operation of the system. It is suitable for power switching, overcurrent protection and other high voltage load control occasions.
In summary, HUF76629D3S-VB is widely used in power management, automotive electronics and industrial automation with its excellent voltage and current handling capabilities, low on-resistance and efficient switching performance. It is particularly suitable for use in applications requiring high voltage and medium current.
The high voltage tolerance and moderate current handling capability of HUF76629D3S-VB MOSFET make it have a wide range of application potential in multiple fields and modules:
1. **Power management system**: This MOSFET performs well in high-voltage power management systems, especially in DC-DC converters and power regulators. The 100V drain-source voltage and low on-resistance enable it to efficiently handle higher input voltages, improving the overall energy efficiency and stability of the system.
2. **Automotive electronics**: HUF76629D3S-VB is ideal for use in automotive electronic systems, such as on-board power management modules and various on-board load switch applications. Its high voltage capability can meet the requirements of many on-board applications, such as electric power steering systems and battery management systems.
3. **Industrial automation and control**: In industrial automation equipment, this MOSFET can be used in high-voltage drive and control circuits, such as drive motors and actuators. Its high current handling capability and voltage resistance enable it to provide reliable performance in harsh industrial environments.
4. **Load switch application**: HUF76629D3S-VB is suitable for high voltage load switch applications, and can reliably switch power in high voltage circuits to ensure safe and stable operation of the system. It is suitable for power switching, overcurrent protection and other high voltage load control occasions.
In summary, HUF76629D3S-VB is widely used in power management, automotive electronics and industrial automation with its excellent voltage and current handling capabilities, low on-resistance and efficient switching performance. It is particularly suitable for use in applications requiring high voltage and medium current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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