Featured Model

Last updated:

HUF76629D3ST-VB Product details

Product introduction:

HUF76629D3ST-VB MOSFET Product Introduction

HUF76629D3ST-VB is a single-channel N-channel MOSFET in TO252 package, designed for high voltage and medium to high current applications. The device has a drain-source voltage (VDS) of up to 100V and can withstand a gate-source voltage (VGS) of ±20V. It uses Trench technology to provide high current capability while maintaining a low on-resistance (RDS(ON)), with an on-resistance as low as 30mΩ at a gate drive voltage of 10V. HUF76629D3ST-VB is suitable for a variety of high-efficiency power management and switching applications, especially in situations where high voltage tolerance and reliable performance are required.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 40A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
HUF76629D3ST-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package size**: TO252 package, supports effective heat dissipation in medium-to-high current and high voltage applications

Domain and module applications:

Application fields and module examples of HUF76629D3ST-VB MOSFET

1. **Industrial power module**: The 100V drain-source voltage and 40A current handling capability of HUF76629D3ST-VB make it very suitable for industrial power modules. It can stably and reliably handle high voltage inputs and effectively reduce conduction losses in switching power supplies and DC-DC converters, thereby improving overall system efficiency, and is suitable for industrial equipment power supply and efficient power management.

2. **Battery Management System (BMS)**: In the battery management system, HUF76629D3ST-VB can be used as a protection and control element. Its high voltage tolerance and low on-resistance help to achieve efficient battery charge and discharge control. It is particularly suitable for BMS modules in electric vehicles and energy storage systems to ensure the safety and performance of battery packs.

3. **Automotive electronic module**: The high voltage characteristics and reliable performance of this MOSFET make it suitable for power control modules in automotive electronic systems. It can provide efficient power conversion and distribution in automotive electrical systems, such as high-power lighting, electric power steering, on-board chargers and other applications, ensuring the stability and reliability of vehicle electronic systems.

4. **Communication equipment power supply**: HUF76629D3ST-VB is also suitable for power modules of communication equipment. It can provide stable power management under the requirements of high voltage and efficient energy conversion, reduce the power consumption of equipment, and improve the reliability and operating efficiency of communication base stations and network equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat