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HUF76629D3ST_F085-VB Product details
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1. HUF76629D3ST_F085-VB Product Introduction
HUF76629D3ST_F085-VB is a high voltage N-Channel MOSFET with a TO252 package type and advanced Trench technology. The device is designed for applications requiring high voltage and medium to high current, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, which can be effectively turned on at a lower gate voltage. HUF76629D3ST_F085-VB provides a lower on-resistance (RDS(ON)): 35mΩ at a gate voltage of 4.5V and 30mΩ at a gate voltage of 10V. This design ensures low power consumption in medium to high current applications, with a maximum drain current (ID) of 40A, suitable for use in various applications with high performance requirements.
HUF76629D3ST_F085-VB is a high voltage N-Channel MOSFET with a TO252 package type and advanced Trench technology. The device is designed for applications requiring high voltage and medium to high current, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, which can be effectively turned on at a lower gate voltage. HUF76629D3ST_F085-VB provides a lower on-resistance (RDS(ON)): 35mΩ at a gate voltage of 4.5V and 30mΩ at a gate voltage of 10V. This design ensures low power consumption in medium to high current applications, with a maximum drain current (ID) of 40A, suitable for use in various applications with high performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HUF76629D3ST_F085-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: Trench
- **Power dissipation (PD)**: 2.5W @ 25°C
- **Input capacitance (Ciss)**: 2000pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn-on time (td(on)) = 80ns
- Turn-off time (td(off)) = 160ns
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 40A
- **Technology**: Trench
- **Power dissipation (PD)**: 2.5W @ 25°C
- **Input capacitance (Ciss)**: 2000pF @ VDS = 50V, VGS = 0V
- **Switching time**:
- Turn-on time (td(on)) = 80ns
- Turn-off time (td(off)) = 160ns
Domain and module applications：
III. Application fields and module examples of HUF76629D3ST_F085-VB
1. **Industrial power system**: HUF76629D3ST_F085-VB is very suitable for use in industrial power converters, especially those that need to handle high voltage and medium current. Its high VDS and low RDS(ON) characteristics can effectively reduce power loss and improve power conversion efficiency. It is suitable for industrial power supply, lighting power supply, UPS system, etc.
2. **Electric vehicles and charging piles**: In the application of electric vehicles (EV) and their charging piles, this MOSFET can be used in modules such as battery management system (BMS) and DC-DC converters. Its high voltage and high current handling capabilities can ensure efficient charging and safe operation of electric vehicles, and improve the reliability of the overall system.
3. **Solar inverter**: HUF76629D3ST_F085-VB can be used as the main power switch in solar inverters. Its high voltage handling capability and low on-resistance can help the inverter achieve higher conversion efficiency and reduce system heating, making it suitable for home or industrial solar power generation systems.
4. **Motor drive control**: This device is suitable for motor drive systems that require high voltage control, especially in industrial automation and robotics. Its fast switching and high efficiency characteristics can improve the control accuracy of the motor and system efficiency.
1. **Industrial power system**: HUF76629D3ST_F085-VB is very suitable for use in industrial power converters, especially those that need to handle high voltage and medium current. Its high VDS and low RDS(ON) characteristics can effectively reduce power loss and improve power conversion efficiency. It is suitable for industrial power supply, lighting power supply, UPS system, etc.
2. **Electric vehicles and charging piles**: In the application of electric vehicles (EV) and their charging piles, this MOSFET can be used in modules such as battery management system (BMS) and DC-DC converters. Its high voltage and high current handling capabilities can ensure efficient charging and safe operation of electric vehicles, and improve the reliability of the overall system.
3. **Solar inverter**: HUF76629D3ST_F085-VB can be used as the main power switch in solar inverters. Its high voltage handling capability and low on-resistance can help the inverter achieve higher conversion efficiency and reduce system heating, making it suitable for home or industrial solar power generation systems.
4. **Motor drive control**: This device is suitable for motor drive systems that require high voltage control, especially in industrial automation and robotics. Its fast switching and high efficiency characteristics can improve the control accuracy of the motor and system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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