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HUF76619D3S-VB Product details
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1. Product Introduction
HUF76619D3S-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for high voltage and medium current applications, this MOSFET has a maximum drain-source voltage of 100V, making it suitable for use in higher voltage environments. It has a gate-source voltage range of ±20V and a threshold voltage of 1.8V, ensuring that it can operate stably even at a lower gate drive voltage. HUF76619D3S-VB uses advanced Trench technology and has a lower on-resistance (57mΩ @ VGS=4.5V and 55mΩ @ VGS=10V), which enables it to perform well in applications that require high current handling, effectively reducing power consumption and improving the overall efficiency of the system.
HUF76619D3S-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for high voltage and medium current applications, this MOSFET has a maximum drain-source voltage of 100V, making it suitable for use in higher voltage environments. It has a gate-source voltage range of ±20V and a threshold voltage of 1.8V, ensuring that it can operate stably even at a lower gate drive voltage. HUF76619D3S-VB uses advanced Trench technology and has a lower on-resistance (57mΩ @ VGS=4.5V and 55mΩ @ VGS=10V), which enables it to perform well in applications that require high current handling, effectively reducing power consumption and improving the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Drain current (ID)**: 25A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 45W
- **Gate charge (Qg)**: Approximately 45nC @ VGS=10V
- **Reverse recovery time (trr)**: 35ns
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS=4.5V
- 55mΩ @ VGS=10V
- **Drain current (ID)**: 25A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 45W
- **Gate charge (Qg)**: Approximately 45nC @ VGS=10V
- **Reverse recovery time (trr)**: 35ns
Domain and module applications：
3. Application fields and module examples
1. **High voltage power management**: HUF76619D3S-VB is very suitable for high voltage power management modules such as DC-DC converters and power switch modules due to its high drain-source voltage of up to 100V and low on-resistance. In these applications, it can efficiently control power distribution and improve the stability and efficiency of the power system.
2. **Motor drive control**: In motor drive systems, the high current handling capability and good conduction characteristics of this MOSFET make it an ideal motor switching element. It can reliably control the start, run and stop of the motor, improving the performance and reliability of the motor drive system.
3. **Load switch application**: HUF76619D3S-VB is suitable for various load switch applications, such as battery protection circuits and load switch modules. It can effectively handle high voltage loads and ensure the stability and high efficiency of the system, especially in situations where high current and high voltage processing are required.
4. **Power Converters**: In power converters, the low on-resistance and high voltage tolerance of this MOSFET make it suitable for efficient power conversion. Its excellent performance ensures low power loss and high efficiency during the conversion process, making it suitable for high-power power conversion and distribution applications.
1. **High voltage power management**: HUF76619D3S-VB is very suitable for high voltage power management modules such as DC-DC converters and power switch modules due to its high drain-source voltage of up to 100V and low on-resistance. In these applications, it can efficiently control power distribution and improve the stability and efficiency of the power system.
2. **Motor drive control**: In motor drive systems, the high current handling capability and good conduction characteristics of this MOSFET make it an ideal motor switching element. It can reliably control the start, run and stop of the motor, improving the performance and reliability of the motor drive system.
3. **Load switch application**: HUF76619D3S-VB is suitable for various load switch applications, such as battery protection circuits and load switch modules. It can effectively handle high voltage loads and ensure the stability and high efficiency of the system, especially in situations where high current and high voltage processing are required.
4. **Power Converters**: In power converters, the low on-resistance and high voltage tolerance of this MOSFET make it suitable for efficient power conversion. Its excellent performance ensures low power loss and high efficiency during the conversion process, making it suitable for high-power power conversion and distribution applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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