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HUF76619D3ST-VB Product details
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Product Introduction
HUF76619D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. The device uses Trench technology, has a high drain-source voltage and moderate on-resistance, and is designed for medium and high voltage applications. The maximum drain-source voltage of HUF76619D3ST-VB is 100V, which is suitable for use in high-voltage and high-power electronic devices. Its high current handling capability and stable electrical performance make it excellent in applications requiring high reliability.
HUF76619D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. The device uses Trench technology, has a high drain-source voltage and moderate on-resistance, and is designed for medium and high voltage applications. The maximum drain-source voltage of HUF76619D3ST-VB is 100V, which is suitable for use in high-voltage and high-power electronic devices. Its high current handling capability and stable electrical performance make it excellent in applications requiring high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 25A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 57mΩ @ VGS = 4.5V
- 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 25A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and module examples
1. **Power management**: HUF76619D3ST-VB excels in power management systems, especially for high voltage DC-DC converters and power switches. Its high drain-source voltage and reasonable on-resistance enable it to handle high power applications and effectively improve the efficiency and stability of power conversion.
2. **Motor drive**: This MOSFET can be used in motor drive systems, such as DC motor and stepper motor control. Its high current handling capability and high drain-source voltage are suitable for driving motor systems with higher requirements while maintaining high efficiency and reliability.
3. **Automotive electronics**: In automotive electronics applications, HUF76619D3ST-VB is suitable for on-board power management and electronic control units (ECUs). Its stable electrical performance and high voltage tolerance can meet the stringent requirements in the automotive environment, ensuring the stability and safety of the system.
4. **Power switch**: In power switch modules, such as battery management systems and power regulators, HUF76619D3ST-VB provides efficient energy management and safety protection through its high drain-source voltage and low on-resistance, helping to improve the overall performance and reliability of the system.
These application examples demonstrate the superior performance of HUF76619D3ST-VB in medium-high voltage and high power applications, making it an ideal choice for a variety of electronic devices requiring high voltage and high reliability.
1. **Power management**: HUF76619D3ST-VB excels in power management systems, especially for high voltage DC-DC converters and power switches. Its high drain-source voltage and reasonable on-resistance enable it to handle high power applications and effectively improve the efficiency and stability of power conversion.
2. **Motor drive**: This MOSFET can be used in motor drive systems, such as DC motor and stepper motor control. Its high current handling capability and high drain-source voltage are suitable for driving motor systems with higher requirements while maintaining high efficiency and reliability.
3. **Automotive electronics**: In automotive electronics applications, HUF76619D3ST-VB is suitable for on-board power management and electronic control units (ECUs). Its stable electrical performance and high voltage tolerance can meet the stringent requirements in the automotive environment, ensuring the stability and safety of the system.
4. **Power switch**: In power switch modules, such as battery management systems and power regulators, HUF76619D3ST-VB provides efficient energy management and safety protection through its high drain-source voltage and low on-resistance, helping to improve the overall performance and reliability of the system.
These application examples demonstrate the superior performance of HUF76619D3ST-VB in medium-high voltage and high power applications, making it an ideal choice for a variety of electronic devices requiring high voltage and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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