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HUF76609D3S-VB Product details
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HUF76609D3S-VB MOSFET Product Introduction
HUF76609D3S-VB is a high voltage, single N-channel MOSFET in a TO252 package. This MOSFET is designed to withstand drain-source voltages (VDS) up to 100V and is suitable for medium and high voltage applications. Its gate-source voltage range is ±20V, which can adapt to various control signal requirements. HUF76609D3S-VB uses Trench technology to optimize switching performance and reduce on-resistance. At a gate voltage of 10V, its on-resistance is 114mΩ, and it can operate stably at a drain current of 15A. This makes the HUF76609D3S-VB perform well in high voltage, high current applications and provide reliable performance.
HUF76609D3S-VB is a high voltage, single N-channel MOSFET in a TO252 package. This MOSFET is designed to withstand drain-source voltages (VDS) up to 100V and is suitable for medium and high voltage applications. Its gate-source voltage range is ±20V, which can adapt to various control signal requirements. HUF76609D3S-VB uses Trench technology to optimize switching performance and reduce on-resistance. At a gate voltage of 10V, its on-resistance is 114mΩ, and it can operate stably at a drain current of 15A. This makes the HUF76609D3S-VB perform well in high voltage, high current applications and provide reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HUF76609D3S-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The characteristics of HUF76609D3S-VB MOSFET make it excel in the following fields and modules:
1. **Power switch**: Due to its high voltage withstand capability and medium on-resistance, HUF76609D3S-VB is suitable for various power switch applications such as switching power supplies and DC-DC converters. It is able to operate stably in high voltage environments and effectively manage energy losses during power conversion.
2. **Motor drive system**: In motor drive applications, the high voltage capability and good current handling capability of HUF76609D3S-VB make it suitable for use in motor control circuits, especially in motor drives and control systems that need to handle high voltages.
3. **Automotive electronic system**: The high voltage resistance and reliable performance of this MOSFET make it suitable for automotive electronic systems such as battery management systems, on-board chargers, and power distribution systems. In automotive environments, it is able to handle high voltage and high current conditions to ensure stable operation of the system.
4. **High power switching applications**: HUF76609D3S-VB's Trench technology provides good switching performance and is suitable for high power switching applications such as inverters and power factor correction (PFC) modules. These applications require efficient switching performance under high voltage and high current conditions.
The characteristics of HUF76609D3S-VB MOSFET make it excel in the following fields and modules:
1. **Power switch**: Due to its high voltage withstand capability and medium on-resistance, HUF76609D3S-VB is suitable for various power switch applications such as switching power supplies and DC-DC converters. It is able to operate stably in high voltage environments and effectively manage energy losses during power conversion.
2. **Motor drive system**: In motor drive applications, the high voltage capability and good current handling capability of HUF76609D3S-VB make it suitable for use in motor control circuits, especially in motor drives and control systems that need to handle high voltages.
3. **Automotive electronic system**: The high voltage resistance and reliable performance of this MOSFET make it suitable for automotive electronic systems such as battery management systems, on-board chargers, and power distribution systems. In automotive environments, it is able to handle high voltage and high current conditions to ensure stable operation of the system.
4. **High power switching applications**: HUF76609D3S-VB's Trench technology provides good switching performance and is suitable for high power switching applications such as inverters and power factor correction (PFC) modules. These applications require efficient switching performance under high voltage and high current conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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