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HUF76609D3ST-VB Product details
Back to previous pageProduct introduction：
1. HUF76609D3ST-VB Product Introduction
HUF76609D3ST-VB is a high-performance single-N-Channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. HUF76609D3ST-VB uses advanced Trench process technology and has a low on-resistance (RDS(ON)), which is 114mΩ at a 10V gate drive. Its maximum drain current (ID) is 15A. These features make HUF76609D3ST-VB very suitable for applications that require high voltage and stable switching performance.
HUF76609D3ST-VB is a high-performance single-N-Channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. HUF76609D3ST-VB uses advanced Trench process technology and has a low on-resistance (RDS(ON)), which is 114mΩ at a 10V gate drive. Its maximum drain current (ID) is 15A. These features make HUF76609D3ST-VB very suitable for applications that require high voltage and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HUF76609D3ST-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)@VGS=10V**: 114mΩ
- **ID (drain current)**: 15A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)@VGS=10V**: 114mΩ
- **ID (drain current)**: 15A
- **Technology**: Trench
Domain and module applications：
III. HUF76609D3ST-VB Application Fields and Module Examples
1. **Power Switch**: HUF76609D3ST-VB performs well in power switch applications, especially in environments where high voltage switching is required. Its high VDS and low RDS(ON) make it suitable for use in switch mode power supplies (SMPS) and high voltage DC-DC converters, enabling effective control of the power conversion process.
2. **Electric Vehicle**: In the power management system of electric vehicles, this MOSFET can be used as a high voltage switch in the battery management system (BMS). Due to its high withstand voltage of 100V, it is suitable for battery protection and current control in electric vehicles.
3. **Industrial Control**: In industrial control and automation systems, HUF76609D3ST-VB can be used for high voltage switching and drive circuits. Its high current capability and high voltage withstand capability make it an ideal choice for industrial switching power supplies and motor drive systems.
4. **Power Inverter**: In power inverter applications, this MOSFET is suitable for solar inverters and other inverter systems that require high voltage and high current. The high voltage capability and stable switching performance of HUF76609D3ST-VB can improve the efficiency and reliability of the inverter.
The high voltage and high current capabilities of HUF76609D3ST-VB enable it to excel in a variety of applications requiring high performance and high stability, providing reliable solutions for multiple fields.
1. **Power Switch**: HUF76609D3ST-VB performs well in power switch applications, especially in environments where high voltage switching is required. Its high VDS and low RDS(ON) make it suitable for use in switch mode power supplies (SMPS) and high voltage DC-DC converters, enabling effective control of the power conversion process.
2. **Electric Vehicle**: In the power management system of electric vehicles, this MOSFET can be used as a high voltage switch in the battery management system (BMS). Due to its high withstand voltage of 100V, it is suitable for battery protection and current control in electric vehicles.
3. **Industrial Control**: In industrial control and automation systems, HUF76609D3ST-VB can be used for high voltage switching and drive circuits. Its high current capability and high voltage withstand capability make it an ideal choice for industrial switching power supplies and motor drive systems.
4. **Power Inverter**: In power inverter applications, this MOSFET is suitable for solar inverters and other inverter systems that require high voltage and high current. The high voltage capability and stable switching performance of HUF76609D3ST-VB can improve the efficiency and reliability of the inverter.
The high voltage and high current capabilities of HUF76609D3ST-VB enable it to excel in a variety of applications requiring high performance and high stability, providing reliable solutions for multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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