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HUF76445S3ST-VB Product details
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Product Introduction
HUF76445S3ST-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Based on Trench technology, this MOSFET has excellent conduction performance and low on-resistance, suitable for applications requiring high efficiency and high power. The maximum drain voltage is 60V, and the gate-source voltage range is ±20V. Its threshold voltage is 3V, and the on-resistance is 4mΩ at VGS=10V, which can support a continuous drain current of up to 150A. HUF76445S3ST-VB is designed to provide excellent current handling capability and low power loss, suitable for a variety of high-power electronic devices.
HUF76445S3ST-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. Based on Trench technology, this MOSFET has excellent conduction performance and low on-resistance, suitable for applications requiring high efficiency and high power. The maximum drain voltage is 60V, and the gate-source voltage range is ±20V. Its threshold voltage is 3V, and the on-resistance is 4mΩ at VGS=10V, which can support a continuous drain current of up to 150A. HUF76445S3ST-VB is designed to provide excellent current handling capability and low power loss, suitable for a variety of high-power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
HUF76445S3ST-VB MOSFET has a wide range of applications in multiple fields:
1. **High-power power management**: Due to its ultra-low on-resistance and high current capability, this MOSFET is particularly suitable for high-power power management systems such as high-power switching power supplies (SMPS) and high-efficiency power conversion modules. It can effectively reduce power losses and improve system efficiency and stability.
2. **Electric Vehicle and Battery Management**: In electric vehicles and battery management systems, HUF76445S3ST-VB is capable of handling high current loads and is suitable for electric vehicle motor drives, charging systems, and battery protection modules. Its high current capability and low on-resistance provide reliable performance in high-power environments.
3. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used as a main switch or synchronous rectifier to help improve conversion efficiency and reduce conversion losses. Its high current handling capability and low on-resistance enable the converter to maintain high efficiency even when the load is heavy.
4. **Industrial Power**: In industrial power modules, such as power adapters, UPS systems, and industrial control systems, HUF76445S3ST-VB can be used as a high-power switching element to provide stable current control and voltage regulation, ensuring system reliability and long life.
These features make HUF76445S3ST-VB MOSFET excellent in high-power and high-efficiency applications, and it is an ideal choice for a variety of high-current and high-voltage applications.
HUF76445S3ST-VB MOSFET has a wide range of applications in multiple fields:
1. **High-power power management**: Due to its ultra-low on-resistance and high current capability, this MOSFET is particularly suitable for high-power power management systems such as high-power switching power supplies (SMPS) and high-efficiency power conversion modules. It can effectively reduce power losses and improve system efficiency and stability.
2. **Electric Vehicle and Battery Management**: In electric vehicles and battery management systems, HUF76445S3ST-VB is capable of handling high current loads and is suitable for electric vehicle motor drives, charging systems, and battery protection modules. Its high current capability and low on-resistance provide reliable performance in high-power environments.
3. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used as a main switch or synchronous rectifier to help improve conversion efficiency and reduce conversion losses. Its high current handling capability and low on-resistance enable the converter to maintain high efficiency even when the load is heavy.
4. **Industrial Power**: In industrial power modules, such as power adapters, UPS systems, and industrial control systems, HUF76445S3ST-VB can be used as a high-power switching element to provide stable current control and voltage regulation, ensuring system reliability and long life.
These features make HUF76445S3ST-VB MOSFET excellent in high-power and high-efficiency applications, and it is an ideal choice for a variety of high-current and high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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