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HUF76443S3ST-VB Product details
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Product Introduction
HUF76443S3ST-VB is a high performance N-channel power MOSFET in TO263 package. It is designed for high current and high voltage applications, with a drain-source voltage of 60V and a maximum drain current of 150A. This MOSFET is manufactured using Trench technology, which provides extremely low on-resistance and excellent switching performance, making it ideal for power management and drive applications that require high power handling and high efficiency.
HUF76443S3ST-VB is a high performance N-channel power MOSFET in TO263 package. It is designed for high current and high voltage applications, with a drain-source voltage of 60V and a maximum drain current of 150A. This MOSFET is manufactured using Trench technology, which provides extremely low on-resistance and excellent switching performance, making it ideal for power management and drive applications that require high power handling and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The high current carrying capacity and low on-resistance of the HUF76443S3ST-VB MOSFET make it excellent in multiple application areas and suitable for the following application scenarios:
1. **High-power power management**: In power management systems that need to handle high voltages and high currents, the 150A drain current and low on-resistance of the HUF76443S3ST-VB make it very suitable for high-efficiency DC-DC converters, power supply systems, and voltage regulation modules, which can significantly improve the efficiency and stability of the system.
2. **Motor drive system**: Due to its ability to withstand drain currents up to 150A, this MOSFET is suitable for high-power motor drive applications, such as motor drive circuits in power tools, large electric vehicle drive systems, and industrial automation equipment, to ensure reliable operation of the motor under high load conditions.
3. **Load switch applications**: HUF76443S3ST-VB can be used as a high-current load switch and is widely used in applications that require high-power switch control, including power switches, overcurrent protection circuits, and various high-current load control applications.
4. **Automotive electronic equipment**: In automotive electronic systems, this MOSFET is capable of handling high voltage and high current, and is suitable for switching and controlling on-board power management, LED light control, power systems, and other high-power on-board electronic equipment, improving the performance and reliability of automotive electronic systems.
Overall, HUF76443S3ST-VB performs well in high-power, high-voltage applications with its excellent high-current carrying capacity and low on-resistance, and is particularly suitable for demanding applications such as power management and drive systems.
The high current carrying capacity and low on-resistance of the HUF76443S3ST-VB MOSFET make it excellent in multiple application areas and suitable for the following application scenarios:
1. **High-power power management**: In power management systems that need to handle high voltages and high currents, the 150A drain current and low on-resistance of the HUF76443S3ST-VB make it very suitable for high-efficiency DC-DC converters, power supply systems, and voltage regulation modules, which can significantly improve the efficiency and stability of the system.
2. **Motor drive system**: Due to its ability to withstand drain currents up to 150A, this MOSFET is suitable for high-power motor drive applications, such as motor drive circuits in power tools, large electric vehicle drive systems, and industrial automation equipment, to ensure reliable operation of the motor under high load conditions.
3. **Load switch applications**: HUF76443S3ST-VB can be used as a high-current load switch and is widely used in applications that require high-power switch control, including power switches, overcurrent protection circuits, and various high-current load control applications.
4. **Automotive electronic equipment**: In automotive electronic systems, this MOSFET is capable of handling high voltage and high current, and is suitable for switching and controlling on-board power management, LED light control, power systems, and other high-power on-board electronic equipment, improving the performance and reliability of automotive electronic systems.
Overall, HUF76443S3ST-VB performs well in high-power, high-voltage applications with its excellent high-current carrying capacity and low on-resistance, and is particularly suitable for demanding applications such as power management and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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