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HUF76439S3ST-VB Product details

Product introduction:

1. HUF76439S3ST-VB Product Introduction

HUF76439S3ST-VB is a high-performance N-Channel MOSFET with TO263 package type and Trench technology. This MOSFET is designed for high voltage and high current applications, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, which can be turned on at a lower gate voltage. HUF76439S3ST-VB provides low on-resistance (RDS(ON)): 12mΩ at a gate voltage of 4.5V and 11mΩ at a gate voltage of 10V, which gives it excellent conduction performance and low power consumption in high current applications. The maximum drain current (ID) is 75A, ensuring its excellent performance in medium and high current applications. The device is suitable for applications requiring high efficiency and high power handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 75A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. HUF76439S3ST-VB Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Power dissipation (PD)**: 2.5W @ 25°C
- **Input capacitance (Ciss)**: 3000pF @ VDS = 15V, VGS = 0V
- **Switching time**:
- Turn on time (td(on)) = 60ns
- Turn off time (td(off)) = 130ns

Domain and module applications:

III. Application fields and module examples of HUF76439S3ST-VB

1. **Power management system**: HUF76439S3ST-VB performs well in high-efficiency power management systems, such as high-power DC-DC converters and power switches. Its low on-resistance and high current carrying capacity can improve power conversion efficiency and reduce energy loss, and is suitable for use in equipment such as computer power supplies and large server power supplies.

2. **Motor control system**: This MOSFET can be used as a switching element in motor control systems, such as electric vehicle motor drives and industrial motor control. Its high current handling capability and low power consumption characteristics ensure smooth operation and efficient drive of the motor, improving the reliability and performance of the motor system.

3. **Switching power supply (SMPS)**: In the switching power supply module, HUF76439S3ST-VB acts as a switching element to handle the conversion of high current and high voltage. Its low on-resistance and fast switching characteristics can improve the efficiency and stability of the power supply, and is suitable for TV power supplies, household appliance power supplies, etc.

4. **Load switch**: HUF76439S3ST-VB is suitable for load switch applications that need to handle medium and high currents, such as load switch modules in battery management systems. Its high current carrying capacity and low power consumption can effectively control the battery load and ensure the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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