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HUF76437S3ST-VB Product details
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1. Product Introduction
HUF76437S3ST-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications that require high current handling and high voltage tolerance. Its maximum drain-source voltage is 60V, suitable for medium and high voltage circuits. The MOSFET has a gate-source voltage range of ±20V and a threshold voltage of 1.7V, enabling it to operate efficiently at a lower gate drive voltage. Using advanced Trench technology, HUF76437S3ST-VB has a very low on-resistance (12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V), which makes it excel in high current applications, effectively reducing power consumption and improving system efficiency.
HUF76437S3ST-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications that require high current handling and high voltage tolerance. Its maximum drain-source voltage is 60V, suitable for medium and high voltage circuits. The MOSFET has a gate-source voltage range of ±20V and a threshold voltage of 1.7V, enabling it to operate efficiently at a lower gate drive voltage. Using advanced Trench technology, HUF76437S3ST-VB has a very low on-resistance (12mΩ @ VGS=4.5V and 11mΩ @ VGS=10V), which makes it excel in high current applications, effectively reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 90W
- **Gate charge (Qg)**: Approximately 120nC @ VGS=10V
- **Reverse recovery time (trr)**: 40ns
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 90W
- **Gate charge (Qg)**: Approximately 120nC @ VGS=10V
- **Reverse recovery time (trr)**: 40ns
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power converter**: HUF76437S3ST-VB is very suitable for high-efficiency DC-DC converters due to its low on-resistance and high current handling capability. In these applications, this MOSFET can significantly reduce energy loss and improve conversion efficiency, making it suitable for high-power and high-efficiency power management systems.
2. **Motor drive control**: This MOSFET performs well in motor drive applications, and its high current carrying capacity and low on-resistance make it an ideal choice in motor control circuits. It can effectively control the start, run and stop of the motor, improving the performance and reliability of the motor system.
3. **Load switch module**: HUF76437S3ST-VB can achieve efficient switching control in load switch applications, such as battery protection circuits and power switch modules. Its high current handling capability and low on-resistance enable it to stably handle high-power loads, ensuring system stability and reliability.
4. **Power Management System**: In various power management and distribution systems, this MOSFET can be used to achieve efficient power distribution and load management. Due to its excellent current handling capability and low power consumption characteristics, HUF76437S3ST-VB can optimize the performance of power management systems and improve overall efficiency.
1. **High-efficiency power converter**: HUF76437S3ST-VB is very suitable for high-efficiency DC-DC converters due to its low on-resistance and high current handling capability. In these applications, this MOSFET can significantly reduce energy loss and improve conversion efficiency, making it suitable for high-power and high-efficiency power management systems.
2. **Motor drive control**: This MOSFET performs well in motor drive applications, and its high current carrying capacity and low on-resistance make it an ideal choice in motor control circuits. It can effectively control the start, run and stop of the motor, improving the performance and reliability of the motor system.
3. **Load switch module**: HUF76437S3ST-VB can achieve efficient switching control in load switch applications, such as battery protection circuits and power switch modules. Its high current handling capability and low on-resistance enable it to stably handle high-power loads, ensuring system stability and reliability.
4. **Power Management System**: In various power management and distribution systems, this MOSFET can be used to achieve efficient power distribution and load management. Due to its excellent current handling capability and low power consumption characteristics, HUF76437S3ST-VB can optimize the performance of power management systems and improve overall efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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