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HUF76407D3-VB Product details
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HUF76407D3-VB MOSFET Product Introduction
HUF76407D3-VB is a high-performance single N-channel MOSFET in a TO252 package. It is designed to provide reliable performance at a drain-source voltage of 60V, suitable for medium voltage range applications. The MOSFET has a gate-source voltage (VGS) range of ±20V and is equipped with Trench technology for optimized switching performance and low on-resistance. The on-resistance of HUF76407D3-VB is 85mΩ (@VGS=4.5V) and 73mΩ (@VGS=10V), making it perform well in high current applications. It is rated for 18A of drain current and can handle high load conditions.
HUF76407D3-VB is a high-performance single N-channel MOSFET in a TO252 package. It is designed to provide reliable performance at a drain-source voltage of 60V, suitable for medium voltage range applications. The MOSFET has a gate-source voltage (VGS) range of ±20V and is equipped with Trench technology for optimized switching performance and low on-resistance. The on-resistance of HUF76407D3-VB is 85mΩ (@VGS=4.5V) and 73mΩ (@VGS=10V), making it perform well in high current applications. It is rated for 18A of drain current and can handle high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HUF76407D3-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
HUF76407D3-VB MOSFET performs well in the following fields and modules:
1. **Power converter**: Due to its moderate on-resistance and drain-source voltage, HUF76407D3-VB is well suited for medium-power power converters such as DC-DC converters. It can effectively manage power distribution and maintain good efficiency and stability during the conversion process.
2. **Motor drive application**: In motor drive systems, the high current handling capability of HUF76407D3-VB makes it suitable for motor drive circuits. It can operate stably under high current and high voltage conditions, suitable for motor control in power tools and industrial automation.
3. **Automotive electronics**: The high voltage resistance characteristics of this MOSFET make it suitable for multiple modules in automotive electronic systems, such as on-board chargers, lighting control systems, and battery management systems. In automotive environments, it can reliably handle high current and voltage conditions.
4. **High-efficiency switching circuit**: HUF76407D3-VB's Trench technology provides optimized switching performance, making it suitable for high-efficiency switching circuits such as inverters and power factor correction (PFC) modules. These applications require MOSFETs to maintain stable switching performance at high loads and high frequencies.
HUF76407D3-VB MOSFET performs well in the following fields and modules:
1. **Power converter**: Due to its moderate on-resistance and drain-source voltage, HUF76407D3-VB is well suited for medium-power power converters such as DC-DC converters. It can effectively manage power distribution and maintain good efficiency and stability during the conversion process.
2. **Motor drive application**: In motor drive systems, the high current handling capability of HUF76407D3-VB makes it suitable for motor drive circuits. It can operate stably under high current and high voltage conditions, suitable for motor control in power tools and industrial automation.
3. **Automotive electronics**: The high voltage resistance characteristics of this MOSFET make it suitable for multiple modules in automotive electronic systems, such as on-board chargers, lighting control systems, and battery management systems. In automotive environments, it can reliably handle high current and voltage conditions.
4. **High-efficiency switching circuit**: HUF76407D3-VB's Trench technology provides optimized switching performance, making it suitable for high-efficiency switching circuits such as inverters and power factor correction (PFC) modules. These applications require MOSFETs to maintain stable switching performance at high loads and high frequencies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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