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HUF76407D3S-VB Product details
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1. HUF76407D3S-VB Product Introduction
HUF76407D3S-VB is a high-performance single-N-Channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. HUF76407D3S-VB uses advanced Trench process technology to provide a low on-resistance (RDS(ON)), which is 85mΩ at 4.5V gate drive and 73mΩ at 10V gate drive. Its maximum drain current (ID) is 18A. Due to its excellent switching performance and high voltage tolerance, this MOSFET is suitable for applications requiring high performance and high reliability.
HUF76407D3S-VB is a high-performance single-N-Channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. HUF76407D3S-VB uses advanced Trench process technology to provide a low on-resistance (RDS(ON)), which is 85mΩ at 4.5V gate drive and 73mΩ at 10V gate drive. Its maximum drain current (ID) is 18A. Due to its excellent switching performance and high voltage tolerance, this MOSFET is suitable for applications requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HUF76407D3S-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)@VGS=4.5V**: 85mΩ
- **RDS(ON)@VGS=10V**: 73mΩ
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)@VGS=4.5V**: 85mΩ
- **RDS(ON)@VGS=10V**: 73mΩ
- **ID (drain current)**: 18A
- **Technology**: Trench
Domain and module applications：
III. HUF76407D3S-VB Application Fields and Module Examples
1. **Power Management System**: HUF76407D3S-VB is widely used in power management systems, especially in high voltage switching applications. Due to its higher VDS and lower RDS(ON), it is suitable for use in DC-DC converters and other power conversion modules, which can effectively reduce power loss and improve power efficiency.
2. **Electric Vehicle**: In the drive control system of electric vehicles, this MOSFET can be used for high voltage switching in motor controllers. Its high withstand voltage and low on-resistance enable it to withstand the high voltage and high current environment common in electric vehicles.
3. **Industrial Automation**: In industrial automation equipment, HUF76407D3S-VB can be used for high power switching and motor drive control. Its high current handling capability and low switching loss make it an ideal choice for the field of industrial automation.
4. **Chargers and Inverters**: In devices such as chargers and inverters, the high voltage withstand capability and low on-resistance of this MOSFET can improve the reliability and efficiency of the equipment. This is especially important for solar inverters and efficient charging systems.
The high performance characteristics of HUF76407D3S-VB enable it to perform well in a variety of applications requiring high voltage and high current, and is a key component to improve system efficiency and reliability.
1. **Power Management System**: HUF76407D3S-VB is widely used in power management systems, especially in high voltage switching applications. Due to its higher VDS and lower RDS(ON), it is suitable for use in DC-DC converters and other power conversion modules, which can effectively reduce power loss and improve power efficiency.
2. **Electric Vehicle**: In the drive control system of electric vehicles, this MOSFET can be used for high voltage switching in motor controllers. Its high withstand voltage and low on-resistance enable it to withstand the high voltage and high current environment common in electric vehicles.
3. **Industrial Automation**: In industrial automation equipment, HUF76407D3S-VB can be used for high power switching and motor drive control. Its high current handling capability and low switching loss make it an ideal choice for the field of industrial automation.
4. **Chargers and Inverters**: In devices such as chargers and inverters, the high voltage withstand capability and low on-resistance of this MOSFET can improve the reliability and efficiency of the equipment. This is especially important for solar inverters and efficient charging systems.
The high performance characteristics of HUF76407D3S-VB enable it to perform well in a variety of applications requiring high voltage and high current, and is a key component to improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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