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HUF76145S3ST-VB Product details
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Product Introduction
HUF76145S3ST-VB is a high-performance N-channel MOSFET in TO263 package. Based on advanced Trench technology, the device has extremely low on-resistance and high current handling capability, suitable for circuit design requiring high efficiency. The maximum drain voltage is 30V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. Its on-resistance is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and it can withstand a continuous drain current of up to 98A. These features make HUF76145S3ST-VB excellent in high-power and high-efficiency applications.
HUF76145S3ST-VB is a high-performance N-channel MOSFET in TO263 package. Based on advanced Trench technology, the device has extremely low on-resistance and high current handling capability, suitable for circuit design requiring high efficiency. The maximum drain voltage is 30V, the gate-source voltage range is ±20V, and the threshold voltage is 1.7V. Its on-resistance is 2.7mΩ at VGS=4.5V and 2.4mΩ at VGS=10V, and it can withstand a continuous drain current of up to 98A. These features make HUF76145S3ST-VB excellent in high-power and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
HUF76145S3ST-VB MOSFET has a wide range of applications in multiple fields:
1. **High-efficiency power management**: Due to its ultra-low on-resistance and high current capability, this MOSFET is particularly suitable for high-efficiency power management systems, such as efficient switching power supplies (SMPS) and power distribution modules. It can significantly reduce power losses and improve the overall system efficiency.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET can be used as a main switch or synchronous rectifier, and its low on-resistance helps reduce conversion losses and improve converter performance and stability.
3. **Electric vehicle system**: The high current handling capability of HUF76145S3ST-VB makes it suitable for high-power control applications in electric vehicles. For example, in the motor drive and battery management system of electric vehicles, it can effectively control high current loads and maintain high efficiency.
4. **Industrial Power**: In industrial power modules, such as power adapters and industrial control systems, HUF76145S3ST-VB can be used as a high-power switching component to provide reliable current control and efficient power conversion.
These features make HUF76145S3ST-VB MOSFET an ideal choice for high-power, high-efficiency applications, providing excellent performance and reliability.
HUF76145S3ST-VB MOSFET has a wide range of applications in multiple fields:
1. **High-efficiency power management**: Due to its ultra-low on-resistance and high current capability, this MOSFET is particularly suitable for high-efficiency power management systems, such as efficient switching power supplies (SMPS) and power distribution modules. It can significantly reduce power losses and improve the overall system efficiency.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET can be used as a main switch or synchronous rectifier, and its low on-resistance helps reduce conversion losses and improve converter performance and stability.
3. **Electric vehicle system**: The high current handling capability of HUF76145S3ST-VB makes it suitable for high-power control applications in electric vehicles. For example, in the motor drive and battery management system of electric vehicles, it can effectively control high current loads and maintain high efficiency.
4. **Industrial Power**: In industrial power modules, such as power adapters and industrial control systems, HUF76145S3ST-VB can be used as a high-power switching component to provide reliable current control and efficient power conversion.
These features make HUF76145S3ST-VB MOSFET an ideal choice for high-power, high-efficiency applications, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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