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HUF76139S3S-VB Product details
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HUF76139S3S-VB MOSFET Product Introduction
The HUF76139S3S-VB is a high-performance N-type MOSFET in a TO-263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of up to ±20V. Its gate threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate drive voltage. Using Trench technology, the device achieves extremely low on-resistance (RDS(ON)) of 2.7mΩ @ VGS = 4.5V and 2.4mΩ @ VGS = 10V, respectively, and supports a drain current (ID) of up to 98A. This design makes it ideal for applications that require high efficiency and high current handling capabilities.
The HUF76139S3S-VB is a high-performance N-type MOSFET in a TO-263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of up to ±20V. Its gate threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate drive voltage. Using Trench technology, the device achieves extremely low on-resistance (RDS(ON)) of 2.7mΩ @ VGS = 4.5V and 2.4mΩ @ VGS = 10V, respectively, and supports a drain current (ID) of up to 98A. This design makes it ideal for applications that require high efficiency and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HUF76139S3S-VB Detailed parameter description
- **Package type**: TO-263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
Domain and module applications：
HUF76139S3S-VB Applications and Modules
HUF76139S3S-VB MOSFET is suitable for a variety of demanding applications due to its superior performance characteristics:
1. **High-efficiency power converters**: The low on-resistance and high current handling capability of this MOSFET make it ideal for use in high-efficiency DC-DC converters and switching power supplies (SMPS). In these applications, HUF76139S3S-VB can significantly reduce power consumption and heat, and improve overall system efficiency, especially in computers and communication equipment that require high power density.
2. **Motor drive and control**: In motor drive applications, such as power tools and automation equipment, this MOSFET can provide reliable switching performance and high current handling capability to help achieve high-efficiency motor control. Its low RDS(ON) can effectively reduce power losses and improve the operating efficiency of the motor.
3. **Automotive electronics**: The high current handling capability and low power consumption of HUF76139S3S-VB make it suitable for power management modules and switch control circuits in automotive electronic systems. It can be used in automotive battery management systems (BMS), electric power steering systems (EPS) and other high-power switching applications to improve system reliability and performance.
4. **High-performance computing and storage**: In high-performance computing devices and storage systems, the low on-resistance and high current carrying capacity of this MOSFET make it suitable for power management modules and thermal management systems. Its low power consumption can effectively reduce heat generation and improve the stability and life of the equipment.
The design of HUF76139S3S-VB enables it to provide excellent performance in these fields to meet the needs of high current and low power consumption.
HUF76139S3S-VB MOSFET is suitable for a variety of demanding applications due to its superior performance characteristics:
1. **High-efficiency power converters**: The low on-resistance and high current handling capability of this MOSFET make it ideal for use in high-efficiency DC-DC converters and switching power supplies (SMPS). In these applications, HUF76139S3S-VB can significantly reduce power consumption and heat, and improve overall system efficiency, especially in computers and communication equipment that require high power density.
2. **Motor drive and control**: In motor drive applications, such as power tools and automation equipment, this MOSFET can provide reliable switching performance and high current handling capability to help achieve high-efficiency motor control. Its low RDS(ON) can effectively reduce power losses and improve the operating efficiency of the motor.
3. **Automotive electronics**: The high current handling capability and low power consumption of HUF76139S3S-VB make it suitable for power management modules and switch control circuits in automotive electronic systems. It can be used in automotive battery management systems (BMS), electric power steering systems (EPS) and other high-power switching applications to improve system reliability and performance.
4. **High-performance computing and storage**: In high-performance computing devices and storage systems, the low on-resistance and high current carrying capacity of this MOSFET make it suitable for power management modules and thermal management systems. Its low power consumption can effectively reduce heat generation and improve the stability and life of the equipment.
The design of HUF76139S3S-VB enables it to provide excellent performance in these fields to meet the needs of high current and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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