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HUF76139S3ST-VB Product details
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1. Product Introduction
HUF76139S3ST-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for applications requiring high current handling and low on-resistance. The maximum drain-source voltage of this MOSFET is 30V, and the gate-source voltage range is ±20V, making it suitable for medium and low voltage power management. Its threshold voltage is 1.7V, ensuring normal operation at lower gate drive voltages. Using advanced Trench technology, this MOSFET has an extremely low on-resistance (2.7mΩ @ VGS=4.5V and 2.4mΩ @ VGS=10V), which makes it perform well in high current applications, effectively reducing power consumption and improving overall system efficiency.
HUF76139S3ST-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for applications requiring high current handling and low on-resistance. The maximum drain-source voltage of this MOSFET is 30V, and the gate-source voltage range is ±20V, making it suitable for medium and low voltage power management. Its threshold voltage is 1.7V, ensuring normal operation at lower gate drive voltages. Using advanced Trench technology, this MOSFET has an extremely low on-resistance (2.7mΩ @ VGS=4.5V and 2.4mΩ @ VGS=10V), which makes it perform well in high current applications, effectively reducing power consumption and improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 60W
- **Gate charge (Qg)**: About 70nC @ VGS=10V
- **Reverse recovery time (trr)**: 30ns
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 60W
- **Gate charge (Qg)**: About 70nC @ VGS=10V
- **Reverse recovery time (trr)**: 30ns
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power converter**: HUF76139S3ST-VB is very suitable for high-efficiency DC-DC converters due to its ultra-low on-resistance and high current handling capability. This significantly reduces energy loss during power conversion, thereby improving conversion efficiency and reducing heat generation.
2. **Motor drive system**: In motor drive control applications, this MOSFET can be used as the main switching element of the motor. Its high current handling capability and low on-resistance ensure high efficiency during motor startup and operation, and is suitable for high-current motor drive modules.
3. **High-power load switch**: Due to its extremely low on-resistance and high current carrying capacity, HUF76139S3ST-VB is very suitable for use as a high-power load switch. For example, in battery protection circuits and power distribution networks, this MOSFET can achieve efficient load control and reduce power consumption.
4. **Power management system**: In various power management systems, such as intelligent power distribution and power protection modules, HUF76139S3ST-VB can provide stable current control and low-power operation, helping to optimize system performance and extend equipment life.
1. **High-efficiency power converter**: HUF76139S3ST-VB is very suitable for high-efficiency DC-DC converters due to its ultra-low on-resistance and high current handling capability. This significantly reduces energy loss during power conversion, thereby improving conversion efficiency and reducing heat generation.
2. **Motor drive system**: In motor drive control applications, this MOSFET can be used as the main switching element of the motor. Its high current handling capability and low on-resistance ensure high efficiency during motor startup and operation, and is suitable for high-current motor drive modules.
3. **High-power load switch**: Due to its extremely low on-resistance and high current carrying capacity, HUF76139S3ST-VB is very suitable for use as a high-power load switch. For example, in battery protection circuits and power distribution networks, this MOSFET can achieve efficient load control and reduce power consumption.
4. **Power management system**: In various power management systems, such as intelligent power distribution and power protection modules, HUF76139S3ST-VB can provide stable current control and low-power operation, helping to optimize system performance and extend equipment life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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