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HUF76132S3ST-VB Product details
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Product Introduction: HUF76132S3ST-VB
HUF76132S3ST-VB is a single N-channel MOSFET in TO263 package, designed with advanced Trench technology. The device has low on-resistance and high current carrying capacity, and is particularly suitable for high-efficiency and high-power density applications. Its low on-resistance can reduce power loss and improve the overall efficiency of the system, making it an ideal switching element in various electronic devices.
HUF76132S3ST-VB is a single N-channel MOSFET in TO263 package, designed with advanced Trench technology. The device has low on-resistance and high current carrying capacity, and is particularly suitable for high-efficiency and high-power density applications. Its low on-resistance can reduce power loss and improve the overall efficiency of the system, making it an ideal switching element in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: HUF76132S3ST-VB
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Model**: HUF76132S3ST-VB
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current capability of HUF76132S3ST-VB make it very suitable for switching power supply modules such as DC-DC converters. In these applications, it can effectively reduce power loss, improve energy conversion efficiency, and ensure the stability and reliability of the power system.
2. **Battery Management System**: In the battery management system (BMS), this MOSFET can be used to control the battery charging and discharging process. Its high current handling capability and low on-resistance are essential for battery protection and current management in electric vehicles or energy storage systems, which can effectively manage the energy flow of the battery and extend the battery life.
3. **Automotive Electronic Systems**: In automotive electronic systems, such as motor drives and power distribution systems, HUF76132S3ST-VB can provide efficient switching control. Its stable performance and low power consumption characteristics are essential to ensure the efficient operation and durability of vehicle electronic systems, especially in high-load and high-power application environments.
4. **Industrial Equipment**: This MOSFET is also widely used in industrial automation and control systems, such as electric actuators and industrial robots. Its high current capability and fast switching performance make it suitable for applications requiring high power switching, helping to improve the efficiency and reliability of industrial equipment.
Through its excellent electrical performance and advanced Trench technology, HUF76132S3ST-VB has demonstrated outstanding performance in a variety of high-performance applications, especially in designs with strict power and space requirements.
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current capability of HUF76132S3ST-VB make it very suitable for switching power supply modules such as DC-DC converters. In these applications, it can effectively reduce power loss, improve energy conversion efficiency, and ensure the stability and reliability of the power system.
2. **Battery Management System**: In the battery management system (BMS), this MOSFET can be used to control the battery charging and discharging process. Its high current handling capability and low on-resistance are essential for battery protection and current management in electric vehicles or energy storage systems, which can effectively manage the energy flow of the battery and extend the battery life.
3. **Automotive Electronic Systems**: In automotive electronic systems, such as motor drives and power distribution systems, HUF76132S3ST-VB can provide efficient switching control. Its stable performance and low power consumption characteristics are essential to ensure the efficient operation and durability of vehicle electronic systems, especially in high-load and high-power application environments.
4. **Industrial Equipment**: This MOSFET is also widely used in industrial automation and control systems, such as electric actuators and industrial robots. Its high current capability and fast switching performance make it suitable for applications requiring high power switching, helping to improve the efficiency and reliability of industrial equipment.
Through its excellent electrical performance and advanced Trench technology, HUF76132S3ST-VB has demonstrated outstanding performance in a variety of high-performance applications, especially in designs with strict power and space requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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