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HUF76129S3ST-VB Product details
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Product Introduction
HUF76129S3ST-VB is an N-channel power MOSFET in TO263 package, designed for high current and low on-resistance applications. It has a drain-source voltage of 30V and a maximum drain current of 50A, suitable for use in circuits requiring high current handling capability and low power consumption. This MOSFET uses Trench technology, providing excellent switching performance and low on-resistance, making it an ideal choice for many high-efficiency power management and drive applications.
HUF76129S3ST-VB is an N-channel power MOSFET in TO263 package, designed for high current and low on-resistance applications. It has a drain-source voltage of 30V and a maximum drain current of 50A, suitable for use in circuits requiring high current handling capability and low power consumption. This MOSFET uses Trench technology, providing excellent switching performance and low on-resistance, making it an ideal choice for many high-efficiency power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Application fields and modules
HUF76129S3ST-VB MOSFET is widely used in the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **High-power DC-DC converter**: The high current handling capability and low on-resistance of this MOSFET make it very suitable for use in efficient DC-DC converters, which are commonly used in computer power supplies, server power supplies and industrial power supplies to provide stable voltage output.
2. **Motor drive module**: In the motor drive circuit, HUF76129S3ST-VB is able to provide high current support while reducing energy loss. This makes it suitable for motor drive modules of various power tools, household appliances and industrial automation equipment.
3. **Power switch application**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for use as a power switch and can be used in various power switch applications, such as achieving efficient switching control in power management systems.
4. **Automotive Electronics**: In the field of automotive electronics, this MOSFET can be used for power management and load switching applications to support the stable operation of on-board electronic devices such as LED lights, car chargers, etc.
In short, HUF76129S3ST-VB has become the preferred device for many high-power applications with its high current handling capability and excellent switching performance, especially in applications with high power density and efficiency requirements.
HUF76129S3ST-VB MOSFET is widely used in the following fields and modules due to its high current carrying capacity and low on-resistance:
1. **High-power DC-DC converter**: The high current handling capability and low on-resistance of this MOSFET make it very suitable for use in efficient DC-DC converters, which are commonly used in computer power supplies, server power supplies and industrial power supplies to provide stable voltage output.
2. **Motor drive module**: In the motor drive circuit, HUF76129S3ST-VB is able to provide high current support while reducing energy loss. This makes it suitable for motor drive modules of various power tools, household appliances and industrial automation equipment.
3. **Power switch application**: Due to its low on-resistance and high current capability, this MOSFET is very suitable for use as a power switch and can be used in various power switch applications, such as achieving efficient switching control in power management systems.
4. **Automotive Electronics**: In the field of automotive electronics, this MOSFET can be used for power management and load switching applications to support the stable operation of on-board electronic devices such as LED lights, car chargers, etc.
In short, HUF76129S3ST-VB has become the preferred device for many high-power applications with its high current handling capability and excellent switching performance, especially in applications with high power density and efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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