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HUF76129D-VB Product details
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HUF76129D-VB MOSFET Product Introduction
HUF76129D-VB is a high-performance single-channel N-channel MOSFET in a TO252 package. It is designed to meet the needs of low-voltage, high-current applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) capability of ±20V. This MOSFET uses advanced Trench technology, with an on-resistance (RDS(ON)) as low as 7mΩ at a gate drive voltage of 10V, and is capable of high current (ID) support with a maximum current of 70A. Its low on-resistance and high current capability make it ideal for power management applications that require high efficiency and high reliability.
HUF76129D-VB is a high-performance single-channel N-channel MOSFET in a TO252 package. It is designed to meet the needs of low-voltage, high-current applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) capability of ±20V. This MOSFET uses advanced Trench technology, with an on-resistance (RDS(ON)) as low as 7mΩ at a gate drive voltage of 10V, and is capable of high current (ID) support with a maximum current of 70A. Its low on-resistance and high current capability make it ideal for power management applications that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HUF76129D-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package size**: TO252 package, which helps dissipate heat and adapt to higher current applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package size**: TO252 package, which helps dissipate heat and adapt to higher current applications
Domain and module applications：
HUF76129D-VB MOSFET application areas and module examples
1. **High-power switching circuit**: The low on-resistance and high current capability of HUF76129D-VB make it very suitable for use as a switching element in high-power switching circuits, such as motor drive control and power amplifier circuits. These applications need to handle high current and high power, and the efficient switching characteristics of MOSFET can significantly improve the overall efficiency of the system.
2. **DC-DC converter**: In DC-DC converters, the low RDS(ON) value of HUF76129D-VB can reduce energy loss and improve power conversion efficiency. This is especially important for devices that require efficient energy conversion, such as computer power supplies and power modules in communication equipment.
3. **Battery management system**: In the battery management system, HUF76129D-VB can effectively control the battery charging and discharging process and protect the battery from damage due to overcurrent and short circuit. Its high current carrying capacity and low on-resistance enable it to provide reliable performance in such applications.
4. **Power Distribution Network**: In the power distribution network, the high current handling capability and excellent on-characteristics of HUF76129D-VB make it an ideal choice. It can effectively manage and distribute power to ensure the stability and efficient operation of the system, especially in application environments that require high current, such as automotive electronics and industrial control systems.
1. **High-power switching circuit**: The low on-resistance and high current capability of HUF76129D-VB make it very suitable for use as a switching element in high-power switching circuits, such as motor drive control and power amplifier circuits. These applications need to handle high current and high power, and the efficient switching characteristics of MOSFET can significantly improve the overall efficiency of the system.
2. **DC-DC converter**: In DC-DC converters, the low RDS(ON) value of HUF76129D-VB can reduce energy loss and improve power conversion efficiency. This is especially important for devices that require efficient energy conversion, such as computer power supplies and power modules in communication equipment.
3. **Battery management system**: In the battery management system, HUF76129D-VB can effectively control the battery charging and discharging process and protect the battery from damage due to overcurrent and short circuit. Its high current carrying capacity and low on-resistance enable it to provide reliable performance in such applications.
4. **Power Distribution Network**: In the power distribution network, the high current handling capability and excellent on-characteristics of HUF76129D-VB make it an ideal choice. It can effectively manage and distribute power to ensure the stability and efficient operation of the system, especially in application environments that require high current, such as automotive electronics and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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