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HUF76129D3ST-VB Product details
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HUF76129D3ST-VB MOSFET Product Introduction
HUF76129D3ST-VB is a single-channel N-type MOSFET in a TO-252 package. It is designed to provide a reliable switching solution for applications requiring high performance and low on-resistance. It has a rated drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for operation in medium and low voltage environments. The device has good gate drive characteristics and uses advanced Trench technology to achieve low RDS(ON) values and high current handling capabilities, making it ideal for power management and switching applications.
HUF76129D3ST-VB is a single-channel N-type MOSFET in a TO-252 package. It is designed to provide a reliable switching solution for applications requiring high performance and low on-resistance. It has a rated drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for operation in medium and low voltage environments. The device has good gate drive characteristics and uses advanced Trench technology to achieve low RDS(ON) values and high current handling capabilities, making it ideal for power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HUF76129D3ST-VB Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Package type**: TO-252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
Domain and module applications：
HUF76129D3ST-VB Applications and Modules
The HUF76129D3ST-VB MOSFET is suitable for multiple applications. Here are some specific application scenarios:
1. **Power Management Module**: Due to its low RDS(ON) and high current handling capability, this MOSFET can be used in high-efficiency DC-DC converters, synchronous rectification and load switching modules in switching power supplies (SMPS). Its low on-resistance can reduce losses and improve efficiency, especially in portable devices and server power management that require high performance and compact design.
2. **Motor Drive**: In low-voltage motor drive applications, this MOSFET can provide sufficient current capability while maintaining low power consumption. Its stable gate drive characteristics and high current carrying capacity make it suitable for motor control in small power tools, electric vehicles, and motor drives in home appliances.
3. **Automotive electronics**: HUF76129D3ST-VB is also suitable for use in automotive electronics due to its ruggedness and reliability, such as battery management systems (BMS) and other on-board power control modules. It is able to provide high efficiency at low voltages, helping to improve the stability and reliability of automotive electrical systems.
4. **Consumer electronics**: This MOSFET can also be used in power management modules for various consumer electronics products such as smartphones, tablets, laptops, etc., helping to optimize battery life and device performance.
HUF76129D3ST-VB is designed to perform well in these different application scenarios, meeting the efficiency, power and reliability requirements of various types of devices.
The HUF76129D3ST-VB MOSFET is suitable for multiple applications. Here are some specific application scenarios:
1. **Power Management Module**: Due to its low RDS(ON) and high current handling capability, this MOSFET can be used in high-efficiency DC-DC converters, synchronous rectification and load switching modules in switching power supplies (SMPS). Its low on-resistance can reduce losses and improve efficiency, especially in portable devices and server power management that require high performance and compact design.
2. **Motor Drive**: In low-voltage motor drive applications, this MOSFET can provide sufficient current capability while maintaining low power consumption. Its stable gate drive characteristics and high current carrying capacity make it suitable for motor control in small power tools, electric vehicles, and motor drives in home appliances.
3. **Automotive electronics**: HUF76129D3ST-VB is also suitable for use in automotive electronics due to its ruggedness and reliability, such as battery management systems (BMS) and other on-board power control modules. It is able to provide high efficiency at low voltages, helping to improve the stability and reliability of automotive electrical systems.
4. **Consumer electronics**: This MOSFET can also be used in power management modules for various consumer electronics products such as smartphones, tablets, laptops, etc., helping to optimize battery life and device performance.
HUF76129D3ST-VB is designed to perform well in these different application scenarios, meeting the efficiency, power and reliability requirements of various types of devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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