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HUF76121SK8T-VB Product details

Product introduction:

1. Product Introduction

HUF76121SK8T-VB is a single N-channel MOSFET in SOP8 package with excellent switching performance and low on-resistance, suitable for a variety of high-efficiency power supply and load switching applications. Its maximum drain-source voltage is 30V, which is suitable for low-voltage circuit design. It also has a gate-source voltage of ±20V, providing good control flexibility. The low threshold voltage (1.7V) of the device enables it to operate at a lower gate drive voltage, effectively reducing power consumption and improving system efficiency. This MOSFET uses advanced trench technology and has a low on-resistance, making it suitable for use in situations requiring high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
2. Detailed parameter description

- **Package type**: SOP8
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 11mΩ @ VGS=4.5V, 8mΩ @ VGS=10V
- **Drain current (ID)**: 13A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: 1.5W
- **Gate charge (Qg)**: 10nC @ VGS=4.5V
- **Reverse recovery time (trr)**: 20ns

Domain and module applications:

3. Application fields and module examples

1. **Power management module**: HUF76121SK8T-VB is suitable for use as a switching element in DC-DC converters. Due to its low on-resistance and fast switching speed, it can effectively reduce conversion losses and improve overall power efficiency.

2. **Motor drive control**: In motor drive circuits, this MOSFET can be used as a switch controller for the motor. With its high current handling capability and low on-resistance, it can improve motor start-up and operating efficiency, and is suitable for medium and low power motor drive applications.

3. **Load switch application**: Due to its low on-resistance and high gate drive sensitivity, HUF76121SK8T-VB is suitable for load switch applications, such as battery protection circuits, to achieve fast and efficient load switching and reduce system energy consumption.

4. **Consumer Electronics Devices**: In portable consumer electronics devices, this MOSFET can be used in battery management and power control modules. With its small package and high efficiency, it can help the device achieve longer battery life and smaller heat dissipation requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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