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HUF76121S3ST-VB Product details
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Product Introduction
HUF76121S3ST-VB is a high performance single N-channel MOSFET in TO263 package. It is designed to meet the needs of modern electronic devices for low on-resistance and high current handling capability. With its advanced Trench technology, this MOSFET provides excellent electrical performance and is suitable for a variety of switching and amplification applications. With a maximum drain-source voltage of 30V, good thermal performance and reliability, it is ideal for low voltage and high current applications.
HUF76121S3ST-VB is a high performance single N-channel MOSFET in TO263 package. It is designed to meet the needs of modern electronic devices for low on-resistance and high current handling capability. With its advanced Trench technology, this MOSFET provides excellent electrical performance and is suitable for a variety of switching and amplification applications. With a maximum drain-source voltage of 30V, good thermal performance and reliability, it is ideal for low voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and Module Examples
1. **Power Management**: HUF76121S3ST-VB is suitable for power management modules such as DC-DC converters, load switches and synchronous rectifiers. Its low on-resistance and high current handling capability make it excellent in efficient energy conversion and stable power supply.
2. **Motor Control**: This MOSFET is widely used in low-voltage motor control circuits such as brushless DC motors (BLDC) and stepper motor drivers. Its high switching speed and low losses make it suitable for improving the efficiency and precision of motor drive systems.
3. **Battery Management System**: In the battery management system (BMS), HUF76121S3ST-VB can be used in battery protection and current management modules. Its robust design and low conduction losses help extend battery life and ensure safe operation of the system.
4. **Automotive Electronics**: This device also plays an important role in automotive electronic systems such as on-board chargers and electronic control units (ECUs). Its high reliability and durability are suitable for the harsh automotive operating environment.
Through these application examples, the HUF76121S3ST-VB demonstrates its versatility and reliability in high-efficiency and low-loss circuit design.
1. **Power Management**: HUF76121S3ST-VB is suitable for power management modules such as DC-DC converters, load switches and synchronous rectifiers. Its low on-resistance and high current handling capability make it excellent in efficient energy conversion and stable power supply.
2. **Motor Control**: This MOSFET is widely used in low-voltage motor control circuits such as brushless DC motors (BLDC) and stepper motor drivers. Its high switching speed and low losses make it suitable for improving the efficiency and precision of motor drive systems.
3. **Battery Management System**: In the battery management system (BMS), HUF76121S3ST-VB can be used in battery protection and current management modules. Its robust design and low conduction losses help extend battery life and ensure safe operation of the system.
4. **Automotive Electronics**: This device also plays an important role in automotive electronic systems such as on-board chargers and electronic control units (ECUs). Its high reliability and durability are suitable for the harsh automotive operating environment.
Through these application examples, the HUF76121S3ST-VB demonstrates its versatility and reliability in high-efficiency and low-loss circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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