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HUF76113T3ST-VB Product details
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Product Introduction
HUF76113T3ST-VB is an N-channel power MOSFET in SOT223 package with low on-resistance and high current handling capability. Its VDS is 30V, suitable for low voltage switching applications. This device uses Trench technology, with low on-resistance and high efficiency, which is very suitable for use in high-efficiency switching circuits.
HUF76113T3ST-VB is an N-channel power MOSFET in SOT223 package with low on-resistance and high current handling capability. Its VDS is 30V, suitable for low voltage switching applications. This device uses Trench technology, with low on-resistance and high efficiency, which is very suitable for use in high-efficiency switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
HUF76113T3ST-VB MOSFET performs well in a variety of applications, mainly suitable for the following fields and modules:
1. **Power management module**: Due to its low on-resistance and efficient switching performance, this MOSFET is very suitable for use in power management circuits such as DC-DC converters and voltage regulators.
2. **Motor drive circuit**: In small motor drive applications, this MOSFET can provide sufficient current drive while maintaining low power consumption, suitable for small drive circuits such as toy motors and micro fans.
3. **Load switch application**: HUF76113T3ST-VB can be used as a load switch, providing efficient power switching function, suitable for applications such as smart devices, mobile power supplies, portable devices, etc.
4. **Consumer electronics**: Due to its small size and high performance, this MOSFET is widely used in power management and control circuits in consumer electronics such as mobile phones and tablets.
From these application examples, we can see that HUF76113T3ST-VB is a MOSFET that is very suitable for high-performance and compact design requirements, especially for applications with high requirements on size and power consumption.
HUF76113T3ST-VB MOSFET performs well in a variety of applications, mainly suitable for the following fields and modules:
1. **Power management module**: Due to its low on-resistance and efficient switching performance, this MOSFET is very suitable for use in power management circuits such as DC-DC converters and voltage regulators.
2. **Motor drive circuit**: In small motor drive applications, this MOSFET can provide sufficient current drive while maintaining low power consumption, suitable for small drive circuits such as toy motors and micro fans.
3. **Load switch application**: HUF76113T3ST-VB can be used as a load switch, providing efficient power switching function, suitable for applications such as smart devices, mobile power supplies, portable devices, etc.
4. **Consumer electronics**: Due to its small size and high performance, this MOSFET is widely used in power management and control circuits in consumer electronics such as mobile phones and tablets.
From these application examples, we can see that HUF76113T3ST-VB is a MOSFET that is very suitable for high-performance and compact design requirements, especially for applications with high requirements on size and power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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