Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
HUF76113SK8T-VB MOSFET Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench
- **Package size**: The small size of SOP8 package helps save PCB space
Domain and module applications：
HUF76113SK8T-VB MOSFET application areas and module examples
1. **Motor drive control module**: HUF76113SK8T-VB is particularly suitable for low-voltage switches in motor drive control circuits due to its low on-resistance and high current carrying capacity. This enables efficient control in applications that require fast response and low power consumption.
2. **DC-DC converter**: This MOSFET performs well in DC-DC converters, especially in portable devices and battery-powered devices, providing efficient power conversion and reducing energy losses.
3. **Load switch**: Due to its excellent on-resistance and switching speed, HUF76113SK8T-VB is an ideal choice for intelligent load switches. In situations where frequent switching is required and low power consumption needs to be maintained, such as power management units and computing devices, this MOSFET can effectively reduce power losses.
4. **Power distribution system**: This MOSFET can also be used in the protection circuit in the power distribution system to quickly cut off the power supply in case of overcurrent or short circuit to protect other electronic components from damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
