Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: HUF76112SK8T-VB
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench
Domain and module applications:
Applications and Modules
1. **DC-DC Converters**: The low on-resistance and medium current handling capability of the HUF76112SK8T-VB make it ideal for use in DC-DC converters. This MOSFET is able to efficiently convert power at medium voltages, reduce power losses, and improve overall system efficiency, especially in applications with high power management requirements.
2. **Motor Drive**: With its ability to handle currents up to 13A and low on-resistance, the HUF76112SK8T-VB is ideal for motor drive systems, especially for driving small DC motors or stepper motors. It provides a stable current supply and can effectively reduce heat generation, improving system reliability and efficiency.
3. **Automotive Electronics**: In automotive electronic applications, such as battery management systems and electric vehicle drive modules, this MOSFET's high current handling capability and low on-resistance make it a preferred component. Its high efficiency and stability ensure long-term reliable operation in an automotive environment, making it suitable for electric vehicles and other automotive electronic devices.
4. **Power Management Circuits**: HUF76112SK8T-VB can be used in power management circuits, including power switches and battery protection circuits. Its low on-resistance and high current handling capability help ensure circuit stability and protection against overcurrent or short-circuit conditions.
5. **LED Driver**: In LED driver applications, HUF76112SK8T-VB is able to efficiently supply current and manage power. Its low on-resistance reduces energy losses, making it ideal for use in high-power LED lighting systems, providing a stable light source and efficient energy conversion.
These application examples demonstrate the wide applicability of the HUF76112SK8T-VB MOSFET in medium voltage and medium current applications, suitable for a variety of circuits and systems that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours