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HUF76107D3ST-VB Product details
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Product Introduction
**Model: HUF76107D3ST-VB**
**Package: TO252**
**Configuration: Single N-channel**
**VDS: 30V**
**VGS: ±20V**
**Vth: 1.7V**
**RDS(ON) @ VGS=4.5V: 9mΩ**
**RDS(ON) @ VGS=10V: 7mΩ**
**ID: 70A**
**Technology: Trench**
HUF76107D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for applications requiring high current and low on-resistance and can withstand drain-source voltages up to 30V. Using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, making it suitable for a variety of power management and switch control applications.
**Model: HUF76107D3ST-VB**
**Package: TO252**
**Configuration: Single N-channel**
**VDS: 30V**
**VGS: ±20V**
**Vth: 1.7V**
**RDS(ON) @ VGS=4.5V: 9mΩ**
**RDS(ON) @ VGS=10V: 7mΩ**
**ID: 70A**
**Technology: Trench**
HUF76107D3ST-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for applications requiring high current and low on-resistance and can withstand drain-source voltages up to 30V. Using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, making it suitable for a variety of power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 9mΩ
- @ VGS=10V: 7mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 9mΩ
- @ VGS=10V: 7mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-efficiency DC-DC converters**
HUF76107D3ST-VB is very suitable for use in high-efficiency DC-DC converters. Its low on-resistance (7mΩ @ VGS=10V) and high current capability (70A) enable it to effectively handle power conversion, improve the system's energy efficiency and reduce power loss, and is particularly suitable for power modules that require high efficiency and high reliability.
2. **Motor drive system**
In motor drive systems, HUF76107D3ST-VB can be used as a switching element. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive motors, and is particularly suitable for high-current motor control applications, ensuring the stability and efficient operation of the motor system.
3. **Power amplifier**
This MOSFET is also suitable for the design of power amplifiers, especially when high current signals need to be processed. The low on-resistance and high current capability of HUF76107D3ST-VB can provide stable power output and enhance signal processing capabilities in amplifier designs.
4. **High current load switch**
HUF76107D3ST-VB is suitable for high current load switching applications such as power protection and load control circuits. Its low on-resistance and high current capability ensure stable control of high current loads, while effectively preventing circuit damage caused by overcurrent, ensuring system reliability and safety.
These application examples demonstrate the superior performance of HUF76107D3ST-VB in high current and high efficiency applications, especially in power management and power control circuits that require low on-resistance and high current handling capabilities.
1. **High-efficiency DC-DC converters**
HUF76107D3ST-VB is very suitable for use in high-efficiency DC-DC converters. Its low on-resistance (7mΩ @ VGS=10V) and high current capability (70A) enable it to effectively handle power conversion, improve the system's energy efficiency and reduce power loss, and is particularly suitable for power modules that require high efficiency and high reliability.
2. **Motor drive system**
In motor drive systems, HUF76107D3ST-VB can be used as a switching element. Its high current handling capability and low RDS(ON) characteristics enable it to efficiently drive motors, and is particularly suitable for high-current motor control applications, ensuring the stability and efficient operation of the motor system.
3. **Power amplifier**
This MOSFET is also suitable for the design of power amplifiers, especially when high current signals need to be processed. The low on-resistance and high current capability of HUF76107D3ST-VB can provide stable power output and enhance signal processing capabilities in amplifier designs.
4. **High current load switch**
HUF76107D3ST-VB is suitable for high current load switching applications such as power protection and load control circuits. Its low on-resistance and high current capability ensure stable control of high current loads, while effectively preventing circuit damage caused by overcurrent, ensuring system reliability and safety.
These application examples demonstrate the superior performance of HUF76107D3ST-VB in high current and high efficiency applications, especially in power management and power control circuits that require low on-resistance and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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