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HUF76105SK8T-VB Product details

Product introduction:

Product Introduction

**HUF76105SK8T-VB** is a high-efficiency N-Channel MOSFET in SOP8 package. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. Its drain-source resistance (RDS(ON)) is 11mΩ at VGS = 4.5V and 8mΩ at VGS = 10V, and it can carry a maximum continuous drain current (ID) of up to 13A. Manufactured using Trench technology, HUF76105SK8T-VB provides excellent switching performance and low conduction losses, making it suitable for a variety of low-voltage, high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 13A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

**1. Power management **
HUF76105SK8T-VB is suitable for power management circuits such as DC-DC converters and power switches. Its low RDS(ON) characteristics can reduce energy loss during power switching and improve system efficiency, making it particularly suitable for power designs that require high performance and high current handling.

**2. Load switch **
In load switch applications, this MOSFET can be used as an efficient switching element to control load current. Its low on-resistance ensures reduced heat generation and energy loss during switching operations, making it suitable for load control in various electronic devices.

**3. Battery-powered devices **
HUF76105SK8T-VB is suitable for switching control of battery-powered devices such as portable electronics and mobile devices. Its high current carrying capacity and low on-resistance ensure high performance and long-term stable operation of battery-powered systems.

**4. Low-voltage power supply protection**
In low-voltage power supply protection circuits, this MOSFET can be used as an overcurrent or short-circuit protection element. Its excellent switching characteristics and low on-resistance enable it to respond quickly in the protection circuit and effectively protect electronic equipment from overcurrent damage.

**5. LED driver**
HUF76105SK8T-VB is also suitable for LED drive circuits as an efficient switching element to control the switching and brightness of LEDs. Its low RDS(ON) characteristics help improve the overall efficiency and performance of LED drive circuits.

The high efficiency and low on-resistance of this MOSFET enable it to perform well in a variety of low-voltage applications and meet the requirements of modern electronic equipment for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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