Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
HUF76105DK8T-VB Detailed parameter description
1. **Package type**: SOP8
SOP8 package is suitable for compact circuit design, provides good heat dissipation performance and high integration, suitable for space-constrained applications.
2. **Configuration**: Dual N-channel
The dual N-channel configuration allows two N-channel MOSFETs to be provided in one package, suitable for bidirectional switching and driving applications, simplifying circuit design.
3. **Drain-source voltage (VDS)**: 30V
Suitable for medium voltage applications, can effectively handle 30V voltage load, suitable for low to medium power power management and switching applications.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range enhances design flexibility and improves the device's tolerance to overvoltage, ensuring the reliability and durability of the device.
5. **Threshold Voltage (Vth)**: 1.7V
The lower threshold voltage enables the MOSFET to turn on at a lower gate-source voltage, improving switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
Low on-resistance effectively reduces power loss and heat generation, improves the overall efficiency of the system, and is suitable for low-power switching applications.
7. **Maximum Drain Current (ID)**:
- 6.8A
- 6.0A
The drain current capability of up to 6.8A makes it suitable for handling medium current loads and providing stable current control capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and excellent switching performance, suitable for high-efficiency application scenarios.
Domain and module applications：
Application areas and module examples
1. **Power management**: The low on-resistance and high current capability of HUF76105DK8T-VB make it very suitable for use in power switches and power management modules, such as DC-DC converters, switching power supplies and battery management systems, which can improve power conversion efficiency and reduce energy loss.
2. **Load switch**: In load switch applications, this MOSFET can effectively control the flow of current and is suitable for power switches of various electronic devices, such as home appliances, consumer electronics and industrial equipment, providing efficient switching control functions.
3. **Motor drive**: Due to its high current handling capability and low power loss, HUF76105DK8T-VB is suitable for use in motor drive circuits, especially small motors and fans, to ensure smooth operation and efficient control of the motor.
4. **LED drive circuit**: In the LED drive circuit, this MOSFET can efficiently control the current of the LED, suitable for various LED lighting and display applications, providing stable driving capability and efficient power management.
5. **Consumer electronics**: The compact package and high efficiency of HUF76105DK8T-VB make it suitable for various consumer electronics products, such as mobile phone chargers, portable devices and home appliances, and can provide reliable switching and power management functions in limited space.
6. **Automotive electronics**: In automotive electronics applications, this MOSFET can be used for power management and load switching, such as electric window control, lighting control system and other automotive electronic modules, providing stable and efficient current control.
Through the introduction of these application fields, it can be seen that HUF76105DK8T-VB MOSFET has become an ideal choice for medium voltage and current applications with its excellent electrical performance and adaptability. It is widely used in power management, motor drive, LED lighting and other high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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