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HUF76017D3S-VB Product details
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1. Product Introduction
HUF76017D3S-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high current and low resistance applications. The drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for low to medium voltage applications. The gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V, which enables it to start at a lower gate voltage. Its on-resistance (RDS(ON)) is 9mΩ at VGS of 4.5V and decreases to 7mΩ at VGS of 10V. This low on-resistance helps reduce power consumption and heat generation under high current conditions, and the maximum drain current (ID) can reach 70A. HUF76017D3S-VB uses Trench technology, which provides excellent switching performance and high efficiency, and is an ideal choice for high current and low voltage applications.
HUF76017D3S-VB is a high-performance N-channel power MOSFET in TO252 package, designed for high current and low resistance applications. The drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for low to medium voltage applications. The gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V, which enables it to start at a lower gate voltage. Its on-resistance (RDS(ON)) is 9mΩ at VGS of 4.5V and decreases to 7mΩ at VGS of 10V. This low on-resistance helps reduce power consumption and heat generation under high current conditions, and the maximum drain current (ID) can reach 70A. HUF76017D3S-VB uses Trench technology, which provides excellent switching performance and high efficiency, and is an ideal choice for high current and low voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
III. Application Fields and Modules
The high current capability and low on-resistance of HUF76017D3S-VB MOSFET make it suitable for multiple fields and modules, including:
1. **DC-DC Converter**: In low voltage and high current DC-DC converters, HUF76017D3S-VB can effectively handle high current loads, and low on-resistance helps improve conversion efficiency and reduce power consumption, which is suitable for the design of high-efficiency power modules.
2. **Power Tools**: Due to its high current handling capability, this MOSFET can be used in the power management and control circuits of power tools to ensure stable operation and high efficiency of the tools under high load conditions.
3. **Automotive Electronic Systems**: In automotive electronic systems, HUF76017D3S-VB can be used for the control of electric windows, seat adjusters and other high current loads, and can provide reliable performance in the electrical system of the car.
4. **Power Management System**: In power management and battery management systems, this MOSFET can be used for high current charge and discharge control to improve the overall efficiency and stability of the system.
5. **Industrial Power Control**: In industrial power control modules, the low on-resistance and high current capability of HUF76017D3S-VB make it suitable for switching and control applications of high current loads, ensuring efficient and stable operation of the system.
These applications demonstrate the excellent performance of HUF76017D3S-VB, making it a key component in high current and low voltage power electronic systems.
The high current capability and low on-resistance of HUF76017D3S-VB MOSFET make it suitable for multiple fields and modules, including:
1. **DC-DC Converter**: In low voltage and high current DC-DC converters, HUF76017D3S-VB can effectively handle high current loads, and low on-resistance helps improve conversion efficiency and reduce power consumption, which is suitable for the design of high-efficiency power modules.
2. **Power Tools**: Due to its high current handling capability, this MOSFET can be used in the power management and control circuits of power tools to ensure stable operation and high efficiency of the tools under high load conditions.
3. **Automotive Electronic Systems**: In automotive electronic systems, HUF76017D3S-VB can be used for the control of electric windows, seat adjusters and other high current loads, and can provide reliable performance in the electrical system of the car.
4. **Power Management System**: In power management and battery management systems, this MOSFET can be used for high current charge and discharge control to improve the overall efficiency and stability of the system.
5. **Industrial Power Control**: In industrial power control modules, the low on-resistance and high current capability of HUF76017D3S-VB make it suitable for switching and control applications of high current loads, ensuring efficient and stable operation of the system.
These applications demonstrate the excellent performance of HUF76017D3S-VB, making it a key component in high current and low voltage power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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