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HUF76013D3-VB Product details
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Product Introduction
**HUF76013D3-VB** is a high-performance single N-channel MOSFET in a TO-252 package, designed for low voltage, high current applications. The MOSFET supports a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for applications that require lower voltage but higher current handling capabilities. Its turn-on voltage (Vth) is 1.7V, ensuring good switching performance at lower gate-source voltages. The on-resistance (RDS(ON)) of HUF76013D3-VB is 9mΩ at VGS=4.5V, and drops to 7mΩ at VGS=10V, providing extremely low conduction losses and excellent current conduction capability. The maximum drain current (ID) is 70A. The MOSFET uses Trench technology to ensure efficient switching performance and reliability, and is suitable for a variety of high current and high-efficiency application scenarios.
**HUF76013D3-VB** is a high-performance single N-channel MOSFET in a TO-252 package, designed for low voltage, high current applications. The MOSFET supports a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for applications that require lower voltage but higher current handling capabilities. Its turn-on voltage (Vth) is 1.7V, ensuring good switching performance at lower gate-source voltages. The on-resistance (RDS(ON)) of HUF76013D3-VB is 9mΩ at VGS=4.5V, and drops to 7mΩ at VGS=10V, providing extremely low conduction losses and excellent current conduction capability. The maximum drain current (ID) is 70A. The MOSFET uses Trench technology to ensure efficient switching performance and reliability, and is suitable for a variety of high current and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Model**: HUF76013D3-VB
2. **Package type**: TO-252
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 30V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 1.7V
7. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 70A
9. **Technology**: Trench
1. **Model**: HUF76013D3-VB
2. **Package type**: TO-252
3. **Configuration**: Single-N-Channel
4. **Drain-source voltage (VDS)**: 30V
5. **Gate-source voltage (VGS)**: ±20V
6. **Throw-on voltage (Vth)**: 1.7V
7. **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
8. **Maximum drain current (ID)**: 70A
9. **Technology**: Trench
Domain and module applications：
Applications and Modules
**HUF76013D3-VB**'s low on-resistance and high current handling capability enable it to excel in multiple areas and modules:
1. **Power Management**: This MOSFET provides efficient performance in DC-DC converters and power switching circuits. It is particularly suitable for applications that need to handle higher currents and low voltages, such as computer power supplies, industrial power systems, and communication equipment power modules.
2. **Motor Drive**: Due to its high current capability and low on-resistance, HUF76013D3-VB is ideal for motor drive systems in power tools, electric vehicles, and industrial automation. It can effectively control the operation of the motor and improve the efficiency and stability of the system.
3. **Power Amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF76013D3-VB provides excellent current transfer performance and low conduction losses, and is suitable for power amplifier modules in audio systems and wireless communication equipment.
4. **LED drive and lighting system**: This MOSFET is also suitable for high-current LED drive circuits, can support efficient LED lighting systems, and is suitable for smart lighting and high-power lighting solutions.
**HUF76013D3-VB**'s high current handling capability and low on-resistance make it an ideal choice for a variety of high-efficiency, high-power applications, providing a reliable solution for multiple application scenarios.
**HUF76013D3-VB**'s low on-resistance and high current handling capability enable it to excel in multiple areas and modules:
1. **Power Management**: This MOSFET provides efficient performance in DC-DC converters and power switching circuits. It is particularly suitable for applications that need to handle higher currents and low voltages, such as computer power supplies, industrial power systems, and communication equipment power modules.
2. **Motor Drive**: Due to its high current capability and low on-resistance, HUF76013D3-VB is ideal for motor drive systems in power tools, electric vehicles, and industrial automation. It can effectively control the operation of the motor and improve the efficiency and stability of the system.
3. **Power Amplifier**: In audio power amplifiers and other high-power amplifier applications, HUF76013D3-VB provides excellent current transfer performance and low conduction losses, and is suitable for power amplifier modules in audio systems and wireless communication equipment.
4. **LED drive and lighting system**: This MOSFET is also suitable for high-current LED drive circuits, can support efficient LED lighting systems, and is suitable for smart lighting and high-power lighting solutions.
**HUF76013D3-VB**'s high current handling capability and low on-resistance make it an ideal choice for a variety of high-efficiency, high-power applications, providing a reliable solution for multiple application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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