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HUF76013D3S-VB Product details
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1. HUF76013D3S-VB MOSFET Product Introduction
HUF76013D3S-VB is a high-performance single N-channel power MOSFET in TO-252 package, designed for low voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, a turn-on voltage (Vth) of 1.7V, and is manufactured using Trench technology. Its on-resistance (RDS(ON)) is 9mΩ@VGS=4.5V and 7mΩ@VGS=10V, and the maximum drain current (ID) is 70A. The low on-resistance and high current carrying capacity of HUF76013D3S-VB enable it to excel in applications requiring high efficiency and high power density.
HUF76013D3S-VB is a high-performance single N-channel power MOSFET in TO-252 package, designed for low voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, a turn-on voltage (Vth) of 1.7V, and is manufactured using Trench technology. Its on-resistance (RDS(ON)) is 9mΩ@VGS=4.5V and 7mΩ@VGS=10V, and the maximum drain current (ID) is 70A. The low on-resistance and high current carrying capacity of HUF76013D3S-VB enable it to excel in applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HUF76013D3S-VB MOSFET Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Thermal resistance (RθJC)**: Typical value 2.0°C/W
- **Total gate charge (Qg)**: Typical value 85nC
- **Output capacitance (Coss)**: Typical value 100pF
- **Maximum power dissipation (Ptot)**: 50W typical (at Tc = 25°C)
- **Drain-source breakdown voltage (V(BR)DSS)**: 30V
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Thermal resistance (RθJC)**: Typical value 2.0°C/W
- **Total gate charge (Qg)**: Typical value 85nC
- **Output capacitance (Coss)**: Typical value 100pF
- **Maximum power dissipation (Ptot)**: 50W typical (at Tc = 25°C)
- **Drain-source breakdown voltage (V(BR)DSS)**: 30V
Domain and module applications：
III. HUF76013D3S-VB MOSFET Applications and Module Examples
1. **DC-DC Converter**: HUF76013D3S-VB is ideal for low voltage DC-DC converters such as power modules and voltage regulator circuits. Its low on-resistance and high current handling capability can improve conversion efficiency and reduce energy loss, making it outstanding in high-efficiency power supply designs.
2. **Motor Driver**: In motor drive applications such as stepper motors and DC motor control systems, HUF76013D3S-VB can provide reliable high current switching performance. Its low on-resistance helps improve the efficiency of motor drive systems and reduce power losses, making it suitable for automation equipment and small power tools.
3. **LED Lighting Driver**: This MOSFET is also suitable for low voltage high power LED lighting driver circuits. In LED drive systems, HUF76013D3S-VB can effectively manage high currents, ensure stable operation of LED modules, and optimize power conversion efficiency through low on-resistance, thereby improving the light output and service life of LED lamps.
4. **Battery Management System**: HUF76013D3S-VB is suitable for battery management systems such as battery protection circuits and battery charge and discharge management. Its low on-resistance and high current capability can provide reliable switching performance during battery charging and discharging, enhancing system stability and safety.
HUF76013D3S-VB is a high-performance power MOSFET suitable for low-voltage and high-current applications, which can meet the needs of multiple fields such as DC-DC converters, motor drives, LED lighting and battery management.
1. **DC-DC Converter**: HUF76013D3S-VB is ideal for low voltage DC-DC converters such as power modules and voltage regulator circuits. Its low on-resistance and high current handling capability can improve conversion efficiency and reduce energy loss, making it outstanding in high-efficiency power supply designs.
2. **Motor Driver**: In motor drive applications such as stepper motors and DC motor control systems, HUF76013D3S-VB can provide reliable high current switching performance. Its low on-resistance helps improve the efficiency of motor drive systems and reduce power losses, making it suitable for automation equipment and small power tools.
3. **LED Lighting Driver**: This MOSFET is also suitable for low voltage high power LED lighting driver circuits. In LED drive systems, HUF76013D3S-VB can effectively manage high currents, ensure stable operation of LED modules, and optimize power conversion efficiency through low on-resistance, thereby improving the light output and service life of LED lamps.
4. **Battery Management System**: HUF76013D3S-VB is suitable for battery management systems such as battery protection circuits and battery charge and discharge management. Its low on-resistance and high current capability can provide reliable switching performance during battery charging and discharging, enhancing system stability and safety.
HUF76013D3S-VB is a high-performance power MOSFET suitable for low-voltage and high-current applications, which can meet the needs of multiple fields such as DC-DC converters, motor drives, LED lighting and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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