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HUF76009D3S-VB Product details
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HUF76009D3S-VB MOSFET Product Introduction
**HUF76009D3S-VB** is a high-performance N-Channel MOSFET packaged in TO252. This MOSFET uses advanced Trench technology, with low on-resistance and excellent switching performance. Its maximum drain-source voltage is 30V, and it can withstand a continuous current of up to 70A, which is very suitable for medium voltage and high current applications. The gate threshold voltage is 1.7V, which allows it to reliably conduct at a lower gate drive voltage, suitable for various circuit designs that require high efficiency.
**HUF76009D3S-VB** is a high-performance N-Channel MOSFET packaged in TO252. This MOSFET uses advanced Trench technology, with low on-resistance and excellent switching performance. Its maximum drain-source voltage is 30V, and it can withstand a continuous current of up to 70A, which is very suitable for medium voltage and high current applications. The gate threshold voltage is 1.7V, which allows it to reliably conduct at a lower gate drive voltage, suitable for various circuit designs that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HUF76009D3S-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: HUF76009D3S-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **DC-DC Converters**: The low on-resistance and high current handling capability of the HUF76009D3S-VB make it ideal for use in DC-DC converters. This MOSFET provides efficient power conversion, reduces energy loss, and improves the overall efficiency of the system, especially in applications that need to handle medium voltages and high currents.
2. **Motor Drive Systems**: Due to its ability to handle high currents and low on-resistance, the HUF76009D3S-VB is ideal for motor control systems, especially for driving DC motors and stepper motors. It provides stable drive capabilities and reduces system heat generation, thereby improving overall system reliability.
3. **Automotive Electronics**: In automotive electronics applications, such as battery management systems and electric vehicle drive modules, this MOSFET's high current and medium voltage carrying capabilities make it a preferred component. Its low on-resistance ensures efficient power management and long-term system reliability.
4. **Power Management Circuit**: HUF76009D3S-VB is also suitable for various power management circuits, including power switches and battery protection circuits. Its low on-resistance and high current carrying capacity help ensure circuit stability and protection functions, and can effectively prevent overcurrent and short-circuit conditions.
5. **LED Driver**: In LED driver applications, HUF76009D3S-VB can provide efficient power conversion and stable current management. Its low on-resistance reduces power loss and can handle high current requirements, suitable for high-power LED lighting systems.
These application examples show the wide applicability of HUF76009D3S-VB MOSFET in medium voltage and high current circuits, suitable for a variety of applications requiring high performance and reliability.
1. **DC-DC Converters**: The low on-resistance and high current handling capability of the HUF76009D3S-VB make it ideal for use in DC-DC converters. This MOSFET provides efficient power conversion, reduces energy loss, and improves the overall efficiency of the system, especially in applications that need to handle medium voltages and high currents.
2. **Motor Drive Systems**: Due to its ability to handle high currents and low on-resistance, the HUF76009D3S-VB is ideal for motor control systems, especially for driving DC motors and stepper motors. It provides stable drive capabilities and reduces system heat generation, thereby improving overall system reliability.
3. **Automotive Electronics**: In automotive electronics applications, such as battery management systems and electric vehicle drive modules, this MOSFET's high current and medium voltage carrying capabilities make it a preferred component. Its low on-resistance ensures efficient power management and long-term system reliability.
4. **Power Management Circuit**: HUF76009D3S-VB is also suitable for various power management circuits, including power switches and battery protection circuits. Its low on-resistance and high current carrying capacity help ensure circuit stability and protection functions, and can effectively prevent overcurrent and short-circuit conditions.
5. **LED Driver**: In LED driver applications, HUF76009D3S-VB can provide efficient power conversion and stable current management. Its low on-resistance reduces power loss and can handle high current requirements, suitable for high-power LED lighting systems.
These application examples show the wide applicability of HUF76009D3S-VB MOSFET in medium voltage and high current circuits, suitable for a variety of applications requiring high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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