HUF75939S3ST-VB Product details
Product introduction:
**Model: HUF75939S3ST-VB**
**Package: TO263**
**Configuration: Single N-Channel**
**Technology: Trench**
HUF75939S3ST-VB is a high voltage, high performance single N-Channel MOSFET in TO263 package. Manufactured using Trench technology, this MOSFET provides excellent current handling capability and low on-resistance for high voltage and high power applications. It can withstand drain-source voltages up to 200V and supports continuous currents up to 40A, making it an excellent performer in a variety of high power and high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package:** TO263
- **Configuration:** Single N-Channel
- **VDS (drain-source voltage):** 200V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** 3V
- **RDS(ON) (on-resistance):** 48mΩ @ VGS = 10V
- **ID (maximum continuous current):** 40A
- **Technology:** Trench
Domain and module applications:
HUF75939S3ST-VB is suitable for the following fields and modules:
1. **High voltage power management:** Due to its high voltage tolerance of 200V, HUF75939S3ST-VB is very suitable for high voltage power management systems. It can efficiently switch high voltage loads and is suitable for various power converters and high voltage power modules, providing reliable current control and stable switching operation.
2. **DC-DC converter:** In high voltage DC-DC converter applications, the low RDS(ON) and high current capability of this MOSFET enable it to improve conversion efficiency and reduce power losses. It is suitable for high-efficiency power modules and various high voltage power conversion occasions, ensuring high performance and high efficiency voltage conversion.
3. **Power amplifier:** HUF75939S3ST-VB performs well in power amplifier design, especially in occasions requiring high voltage and current. Its high current handling capability and low on-resistance enable efficient power output, suitable for applications such as audio amplifiers and RF amplifiers.
4. **Automotive Electronic Systems:** In automotive electronic systems, such as battery management and high-voltage power distribution modules, the HUF75939S3ST-VB is able to handle high voltage and high current requirements. Its high voltage tolerance and stability make it suitable for power control and protection applications in automotive electrical systems.
5. **Industrial Control:** This MOSFET is also suitable for industrial control systems, such as motor control and switching power supplies. Its high current capability and reliable switching performance can meet the high voltage and high power requirements in industrial applications, ensuring system stability and efficiency.
In general, the HUF75939S3ST-VB is suitable for high-voltage, high-power switching applications, especially in the fields of power management, power amplification, and industrial control, with its high voltage tolerance and low on-resistance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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