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HUF75925D3ST-VB Product details
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Product Introduction
**HUF75925D3ST-VB** is a high-voltage N-Channel MOSFET in a TO252 package. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. Its drain-source resistance (RDS(ON)) is 245mΩ at VGS = 10V, and it can carry a maximum continuous drain current (ID) of up to 10A. Manufactured using Trench technology, the HUF75925D3ST-VB provides good switching performance and reliable high-voltage handling capabilities, and is suitable for applications requiring high voltage and stability.
**HUF75925D3ST-VB** is a high-voltage N-Channel MOSFET in a TO252 package. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. Its drain-source resistance (RDS(ON)) is 245mΩ at VGS = 10V, and it can carry a maximum continuous drain current (ID) of up to 10A. Manufactured using Trench technology, the HUF75925D3ST-VB provides good switching performance and reliable high-voltage handling capabilities, and is suitable for applications requiring high voltage and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High-voltage power switch **
HUF75925D3ST-VB is ideal for high-voltage power switch applications. Its high drain-source voltage (VDS) enables it to operate stably in high-voltage environments, ensuring the reliability of the power system. It is particularly suitable for high-voltage power conversion and power management systems.
**2. High-voltage DC-DC converter **
In high-voltage DC-DC converters, this MOSFET can be used as a switching element to handle high-voltage conversion tasks. Although its on-resistance is high, its high voltage capability makes it perform well in high-voltage scenarios and is suitable for converter designs that require high-voltage inputs.
**3. Industrial power systems **
HUF75925D3ST-VB is suitable for various industrial power systems as a switch or control element for high-voltage power supplies. Its high voltage handling capability and stability enable it to handle high-voltage power supplies and loads in industrial applications, providing reliable performance.
**4. Power conversion equipment**
In power conversion equipment, such as inverters and power factor correction (PFC) modules, the high voltage tolerance and switching performance of this MOSFET make it suitable for high voltage and high power applications.
**5. Electrical protection circuits**
HUF75925D3ST-VB can also be used in electrical protection circuits such as overvoltage protection and high voltage protection circuits. Its high drain-source voltage capability enables it to withstand overvoltage conditions and provide reliable protection.
Although this MOSFET has a high RDS(ON), its high voltage tolerance enables it to perform well in specific high voltage applications and can meet the needs of electronic devices with high voltage and high power requirements.
**1. High-voltage power switch **
HUF75925D3ST-VB is ideal for high-voltage power switch applications. Its high drain-source voltage (VDS) enables it to operate stably in high-voltage environments, ensuring the reliability of the power system. It is particularly suitable for high-voltage power conversion and power management systems.
**2. High-voltage DC-DC converter **
In high-voltage DC-DC converters, this MOSFET can be used as a switching element to handle high-voltage conversion tasks. Although its on-resistance is high, its high voltage capability makes it perform well in high-voltage scenarios and is suitable for converter designs that require high-voltage inputs.
**3. Industrial power systems **
HUF75925D3ST-VB is suitable for various industrial power systems as a switch or control element for high-voltage power supplies. Its high voltage handling capability and stability enable it to handle high-voltage power supplies and loads in industrial applications, providing reliable performance.
**4. Power conversion equipment**
In power conversion equipment, such as inverters and power factor correction (PFC) modules, the high voltage tolerance and switching performance of this MOSFET make it suitable for high voltage and high power applications.
**5. Electrical protection circuits**
HUF75925D3ST-VB can also be used in electrical protection circuits such as overvoltage protection and high voltage protection circuits. Its high drain-source voltage capability enables it to withstand overvoltage conditions and provide reliable protection.
Although this MOSFET has a high RDS(ON), its high voltage tolerance enables it to perform well in specific high voltage applications and can meet the needs of electronic devices with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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