中文
English
HUF75852G3-VB Product details
Back to previous pageProduct introduction：
HUF75852G3-VB MOSFET Product Introduction
HUF75852G3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 150V and a maximum drain current (ID) of 150A, which enables it to perform well in handling high power and high current tasks. This MOSFET uses advanced Trench technology, and its on-resistance is 12mΩ at VGS=10V, providing low power loss and high-efficiency switching performance. Its 3V threshold voltage (Vth) ensures that the MOSFET can be efficiently turned on at a lower gate-source voltage, suitable for a variety of high voltage and high current application scenarios.
HUF75852G3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 150V and a maximum drain current (ID) of 150A, which enables it to perform well in handling high power and high current tasks. This MOSFET uses advanced Trench technology, and its on-resistance is 12mΩ at VGS=10V, providing low power loss and high-efficiency switching performance. Its 3V threshold voltage (Vth) ensures that the MOSFET can be efficiently turned on at a lower gate-source voltage, suitable for a variety of high voltage and high current application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
HUF75852G3-VB Detailed parameter description
1. **Package type**: TO247
The TO247 package is designed to handle higher power and current, has excellent heat dissipation performance and durability, and is suitable for applications requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration optimizes current transmission and switching control, and is suitable for a variety of high-power applications.
3. **Drain-source voltage (VDS)**: 150V
The drain-source voltage of up to 150V makes it suitable for handling high-voltage power conversion tasks, ensuring stable operation during power management and conversion.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range enhances design flexibility and improves the device's overvoltage tolerance, ensuring device reliability and durability.
5. **Threshold voltage (Vth)**: 3V
The moderate threshold voltage enables the MOSFET to turn on at a lower gate-source voltage, improving switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=10V
Low on-resistance effectively reduces power loss and heat generation, improves the overall efficiency of the system, and is suitable for high current applications.
7. **Maximum drain current (ID)**: 150A
The drain current capability of up to 150A enables it to handle large current loads and provide powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and excellent switching performance, suitable for high power and high efficiency application scenarios.
1. **Package type**: TO247
The TO247 package is designed to handle higher power and current, has excellent heat dissipation performance and durability, and is suitable for applications requiring high heat dissipation.
2. **Configuration**: Single N-channel
The single N-channel configuration optimizes current transmission and switching control, and is suitable for a variety of high-power applications.
3. **Drain-source voltage (VDS)**: 150V
The drain-source voltage of up to 150V makes it suitable for handling high-voltage power conversion tasks, ensuring stable operation during power management and conversion.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range enhances design flexibility and improves the device's overvoltage tolerance, ensuring device reliability and durability.
5. **Threshold voltage (Vth)**: 3V
The moderate threshold voltage enables the MOSFET to turn on at a lower gate-source voltage, improving switching speed and system efficiency.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=10V
Low on-resistance effectively reduces power loss and heat generation, improves the overall efficiency of the system, and is suitable for high current applications.
7. **Maximum drain current (ID)**: 150A
The drain current capability of up to 150A enables it to handle large current loads and provide powerful power management capabilities.
8. **Technology**: Trench
Trench technology provides low on-resistance and excellent switching performance, suitable for high power and high efficiency application scenarios.
Domain and module applications：
Application fields and module examples
1. **High-power power converter**: The high current and high voltage handling capabilities of HUF75852G3-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can significantly improve power conversion efficiency and reduce energy loss. It is widely used in server power supplies, high-power power modules and data centers.
2. **Motor drive system**: In motor control applications, this MOSFET can handle high current loads and provide stable and efficient motor drive. It is widely used in industrial automation, power tools, electric vehicles and electric transportation, etc., to ensure the reliability and efficiency of motor operation.
3. **Battery Management System (BMS)**: HUF75852G3-VB is suitable for use in battery management systems, which can efficiently manage the charging and discharging process of batteries, especially in high-power battery applications such as electric vehicles and energy storage systems, to ensure the safety and performance of battery packs.
4. **LED drive circuit**: Due to its high current and high voltage handling capabilities, this MOSFET is also suitable for use in high-power LED drive circuits, can provide stable LED drive current, and is widely used in high-brightness LED lighting and high-power backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for use in audio amplifiers, broadcasting systems and other high-power amplification applications.
6. **Inverter**: The high current capability and low on-resistance of HUF75852G3-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing stable power management and conversion capabilities to meet the needs of energy management.
Through the introduction of these application fields, it can be seen that HUF75852G3-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
1. **High-power power converter**: The high current and high voltage handling capabilities of HUF75852G3-VB make it very suitable for use in high-power DC-DC converters and AC-DC power adapters, which can significantly improve power conversion efficiency and reduce energy loss. It is widely used in server power supplies, high-power power modules and data centers.
2. **Motor drive system**: In motor control applications, this MOSFET can handle high current loads and provide stable and efficient motor drive. It is widely used in industrial automation, power tools, electric vehicles and electric transportation, etc., to ensure the reliability and efficiency of motor operation.
3. **Battery Management System (BMS)**: HUF75852G3-VB is suitable for use in battery management systems, which can efficiently manage the charging and discharging process of batteries, especially in high-power battery applications such as electric vehicles and energy storage systems, to ensure the safety and performance of battery packs.
4. **LED drive circuit**: Due to its high current and high voltage handling capabilities, this MOSFET is also suitable for use in high-power LED drive circuits, can provide stable LED drive current, and is widely used in high-brightness LED lighting and high-power backlight systems.
5. **Power amplifier**: In the power amplifier circuit, this MOSFET can efficiently process high-power signals and improve the overall performance of the system. It is suitable for use in audio amplifiers, broadcasting systems and other high-power amplification applications.
6. **Inverter**: The high current capability and low on-resistance of HUF75852G3-VB ensure efficient power conversion. It is suitable for high-efficiency power conversion applications such as solar inverters and UPS systems, providing stable power management and conversion capabilities to meet the needs of energy management.
Through the introduction of these application fields, it can be seen that HUF75852G3-VB MOSFET has become an ideal choice for high-power and high-efficiency applications with its excellent electrical performance and adaptability. It is widely used in power management, motor control, lighting and other high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
